DATA SHEET
ED1002CT~ED1006CT
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Superfast recovery times for high efficiency
• Plastic package has Underwriters Laboratory
• Glass passivated junction
• Pb free product are available : 99% Sn above can meet Rohs environment
.307(7.8)
.283(7.2)
.225(5.7)
.209(5.3)
.063(1.6)
.047(1.2)
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
200 to 600 Volts
CURRENT
10 Amperes
TO-251AB
Unit : inch (mm)
• Easy pick and place
.216(5.5)
.200(5.1)
Flammability Classification 94V-O
substance directive request
.071(1.8)
.051(1.3)
.032(0.8)
.012(0.3)
.02(0.5)
.09 .09
(2.3) (2.3)
MECHANICALDATA
Case: D PAK/TO-252 molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208
Polarity: Color band denotes cathode
Standard packaging: 16mm tape (EIA-481)
Weight: 0.015 ounce, 0.4 gram.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maxi mum Recurrent Peak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C Blocki ng Voltage
Maxi mum Average Forward C urrent .375"(9.5mm)
lead length at Tc=100
O
C
Peak Forward Surge C urrent, 8.3ms si ngle half si ne-wave
superi mposed on rated load(JED EC method)
Maxi mum Forward Voltage at 5.0A
Maxi mum D C Reverse C urrent T
A
=25
O
C
at Rated D C Blocki ng VoltageT
A
=100
O
C
Maxi mum Reverse Recovery Ti me (Note 1)
Maxi mum thermal Resi stance (Note 2)
Operati ng and Storage Temperature RangeT
J
,T
STG
SYMBOL
V
RRM
V
RMS
V
DC
I
AV
I
FSM
V
F
I
R
T
RR
RθJC
RθJA
T
J
,T
STG
E D 1002C T
200
140
200
E D 1003C T
300
210
300
E D 1004C T
400
280
400
E D 1006C T
600
420
600
UNITS
V
V
V
A
A
10.0
100
0.95
1.3
5.0
50
35
11
80
-55 TO +150
O
1.7
V
uA
ns
C/W
O
C
NOTES:
1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
2. Mounted on P.C. Board with 14mm2 (.013mm thick) copper pad areas.
3. Both Bonding and Chip structure are available.
REV.0-MAR.21.2005
PAGE . 1
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT,
AMPERES
8
6
4
.375"9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
10
150
125
100
75
50
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
2
0
0
20
40
60
80
100
O
120
140
160
1
2
5
10
20
50
100
CASE TEMPERAURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
3
10
50-200V
REVERSE CURRENT, uA
10
2
T
J
=125 C
O
FORWARD CURRENT, AMPERES
300-400V
10
1
1.0
10
0
10
-1
T
J
= 2 5 C
O
T
A
=2 5 C
0.1
0.4
O
10
-2
20
40
60
80
100
120
0.6
0.8
1.0
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLATGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
REV.0-MAR.21.2005
PAGE . 2
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
