BSS8402DW
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
This space-efficient device contains an electrically-isolated complimentary pair
of enhancement-mode MOSFETs (one N-channel and one P-channel). It
comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
portable applications where board space is at a premium.
SOT- 363
4
5
6
2
1
3
FEATURES
Complimentary Pairs
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
Lead free in comply with EU RoHS 2002/95/EC directives.
Green molding compound as per IEC61249 Std. . (Halogen Free)
6
5
4
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
Q
1
Q
2
MARKING CODE: S82
MAXIMUM RATINGS - TOTAL DEVICE
Rating
Total Power Dissipation (Note 1)
Operating Junction and Storage Temperature Range
T
J
= 25°C Unless otherwise noted
Symbol
P
D
T
J
, T
stg
1
2
3
Value
200
-55 to +150
Units
mW
°C
MAXIMUM RATINGS N - CHANNEL - Q
1
, 2N7002
Rating
Drain-Source Voltage
Drain-Gate Voltage R
GS
< 1.0Mohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
60
60
±20
115
Units
V
V
V
mA
MAXIMUM RATINGS P - CHANNEL - Q
2
, BSS84
Rating
Drain-Source Voltage
Drain-Gate Voltage R
GS
< 20Kohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
-50
-50
±20
130
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
R
thja
Value
625
Units
°C/W
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
9/15/2005
Page 1
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BSS8402DW
Electrical Characteristics - N-CHANNEL - Q
1
, 2N7002
OFF CHARACTERISTICS (Note 2)
Parameter
Symbol
Conditions
Min
60
T
J
=25°C
T
J
=125°C
-
-
-
Typ
80
-
-
-
Max
-
1.0
500
±10
Units
V
µA
nA
Drain-Source Breakdown Voltage BV
DSS
I
D
= 10µA, V
GS
= 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Parameter
Gate Threshold Voltage
Symbol
Conditions
Min
1.0
-
-
0.5
0.08
Typ
1.6
1.8
2.0
1.65
-
Max
2.5
4.5
7.0
-
-
Units
V
Ohms
A
S
V
GS(th)
V
DS
= V
GS
I
D
= 250µA
,
V
GS
= 5V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
I
DSS
I
GSS
V
DS
= 60V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0V
T
J
= 25°C Unless otherwise noted
Static Drain-Source On-ResistanceR
DS(ON)
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Symbol
C
iss
C
oss
C
rss
I
D(ON)
V
GS
= 10V, V
DS
= 7.5V
g
FS
V
DS
= 10V, I
D
= 0.2A
Conditions
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Min
-
-
-
Typ
-
-
-
Max
50
25
5.0
Units
pF
pF
pF
Conditions
Min
-
-
Typ
-
-
Max
20
20
Units
ns
ns
t
D(ON)
V =30V, I =0.2A, R =150ohm
L
DD
D
R
GEN
= 25ohm, V
GEN
= 10V
t
D(OFF)
Note 2. Short duration test pulse used to minimize self-heating
9/15/2005
Page 2
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BSS8402DW
Electrical Characteristics - P-CHANNEL - Q
2
, BSS84
OFF CHARACTERISTICS (Note 3)
Parameter
Symbol
Conditions
Min
-50
-
-
-
-
Typ
-
-
-
-
-
Max
-
-15
-60
-0.1
±10
nA
µA
Units
V
Drain-Source Breakdown Voltage BV
DSS
I
D
= -250µA, V
GS
= 0V
V
DS
= -50V, V
GS
= 0V, T
J
=25°C
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Parameter
Gate Threshold Voltage
Symbol
Conditions
Min
-0.8
-
0.05
Typ
1.44
3.8
-
Max
-2.0
10
-
Units
V
Ohms
S
V
GS(th)
V
DS
= V
GS
I
D
= -1mA
,
I
DSS
I
GSS
V
DS
= -50V, V
GS
= 0V, T
J
=125°C
V
DS
= -25V, V
GS
= 0V, T
J
=25°C
V
GS
= ±20V, V
DS
= 0V
T
J
= 25°C Unless otherwise noted
Static Drain-Source On-ResistanceR
DS(ON)
V
GS
= -5V, I
D
= -0.1A
g
FS
V
DS
= -25V, I
D
= -0.1A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Turn-Off Delay Time
Symbol
t
D(ON)
t
D(OFF)
Conditions
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50ohm, V
GS
= -10V
Symbol
C
iss
C
oss
C
rss
Conditions
V
DS
= -25V,
V
GS
= 0V,
f = 1.0MHz
Min
-
-
-
Typ
-
-
-
Max
45
25
12
Units
pF
pF
pF
Min
-
-
Typ
7.5
25
Max
-
-
Units
ns
ns
Note 3. Short duration test pulse used to minimize self-heating
9/15/2005
Page 3
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BSS8402DW
Typical Characteristics Curves - N-Channel - Q
1
, 2N7002
T
J
= 25°C Unless otherwise noted
1
I
D
- Drain-Source Current (A)
1.2
I
D
- Drain Source Current (A
5.0V
0.8
V
DS
=10V
1
0.8
0.6
0.4
25
o
C
0.2
0
4.0V
0.6
V
GS
= 6V, 7V, 8V, 9V, 10V
0.4
0.2
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
3.0V
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Fig. 1. Output Characteristics
10
R
DS(ON)
- On-Resistance (Ohms)
8
6
4
2
V
GS
=10.0V
0
10
Fig. 2. Transfer Characteristics
R
DS(ON)
- On-Resistance (Ohms)
8
6
4
V
GS
=
4.5V
Ids=500mA
2
Ids=50mA
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
I
D
- Drain Current (A)
Fig. 3. On-Resistance vs. Drain Current
V
GS
Threshold Voltage (NORMALIZED
1.1
1.05
1
0.95
0.9
0.85
0.8
-50
V
GS
- Gate-to-Source Voltage (V)
Fig. 4. On-Resistance vs. G-S Voltage
10
I
S
- Source Current (A
I
D
=250
µ
A
V
GS
= 0V
1
0.1
25
o
C
-25
0
25
50
75
100
125 150
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (
o
C)
Fig. 5. Threshold Voltage vs. Temperature
9/15/2005
Page 4
V
SD
- Source-to-Drain Voltage (V)
Fig. 6. Sourse-Drain Diode Forward Voltage
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BSS8402DW
Electrical Characteristic Curves - P-Channel - Q
2
, BSS84
T
J
= 25°C Unless otherwise noted
1
-I
D
- Drain-to-Source Current (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
-I
D
- Drain Source Current (A)
1
0.9
V
GS
= 6V, 7V, 8V, 9V, 10V
V
DS
=10V
0.8
0.6
0.4
25
o
C
0.2
0
0
1
2
3
4
5
6
7
5.0V
4.0V
3.0V
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Fig. 1. Output Characteristics
10
Fig. 2. Transfer Characteristics
10
R
DS(ON)
- On-Resistance (Ohms)
8
6
Ids=-500mA
4
2
Ids=-50mA
0
R
DS(ON)
- On-Resistance (Ohms)
8
V
GS
= 4.5V
6
4
V
GS
=10.0V
2
0
0
0.2
0.4
0.6
0.8
1
2
4
6
8
10
-I
D
- Drain Curre nt (A)
-V
GS
- Gate-to-Source Voltage (V)
Fig. 3. On-Resistance vs. Drain Current
V
GS
Threshold Voltage (NORMALIZED
1.2
Fig. 4. On-Resistance vs. G-S Voltage
10
-I
S
- Source Current (A)
I
D
=250
µ
A
1.1
V
GS
= 0V
1
1
25
o
C
0.1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
0.01
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (
o
C)
-V
SD
- Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
9/15/2005
Page 5
Fig. 6. Sourse-Drain Diode Forward Voltage
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