DATA SHEET
BAV19WS~BAV21WS
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching speed.
.054(1.35)
.078(1.95)
.068(1.75)
120-250 Volts
POWER
200mWatts
SOD-323
Unit: inch (mm)
.014(.35)
• Electrically Identical to Standard JEDEC
• High Conductance
.009(.25)
• Surface mount package Ideally Suited for Automatic insertion
.045(1.15)
.006(.15)
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.107(2.7)
.090(2.3)
MECHANICAL DATA
Case: SOD-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0045 gram
.012(.30)MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
PA RA M E TE R
M a r k i ng C o d e
R e ve r s e V o l t a g e
P e a k R e ve r s e V o l t a g e
R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h
R e s i s t i ve L o a d a nd f > = 5 0 H z
P e a k F o r w a r d S ur g e C ur r e nt , 1 . 0 us
P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5
O
C
M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e
T
J
= 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 )
M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 )
M a xi m um The r m a l R e s i s t a nc e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
V
R
V
RM
I
O
I
F S M
P
TOT
V
F
I
R
C
J
T
RR
Rθ J A
T
J
, T
S TG
S YM B O L
B AV 1 9 W S
A8
100
120
B AV 2 0 W S
A80
150
200
200
2 .5
200
1 .0
0 .1
5 .0
50
640
-5 5 to +1 5 0
O
.002(.05)
• Both normal and Pb free product are available :
.038(.95)
.027(.70)
B AV 2 1 W S
A82
200
250
U N IT S
V
V
mA
A
mW
V
uA
pF
ns
C / W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
STAD-MAY.18.2004
PAGE . 1
1000
100
T
J
=25
O
C
100
I
R
, LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
10
10
1.0
1.0
0.1
0.1
0.01
0
1.0
2.0
0.01
0
100
O
200
FORWARD VOLTAGE, VOLTS
T
J
, JUNCTION TEMPERATURE, C
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
4.5
P
D
,
POWER DISSIPATION (mW)
6.0
400
DIODE CAPACITANCE, pF
300
3.0
200
1.5
100
0
0
2
4
6
8
0
50
100
150
O
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE( C)
FIG. 4 POWER DERATING CURVE
FIG. 3 TYPICAL JUNCTION CAPACITANCE
STAD-MAY.18.2004
PAGE . 2
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