BAS40TW/ADW/CDW/SDW/RDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
4
5
6
2
1
3
FEATURES
Maximum forward voltage @ 10mA of 0.5V
Maximum leakage current @ 25V of 1.0uA
Reverse voltage rating of 40V
Also available in lead-free plating (100% matte tin finish)
APPLICATIONS
Rail-to-rail ESD protection
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
BAS40TW
Isolated Triple
SOT- 363
Various
Configurations
(See Diagrams
Below)
BAS40ADW
Common Anode
BAS40CDW
Common Cathode
BAS40SDW
Series
BAS40RDW
Reverse Series
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
Marking Code: S40
Marking Code: S42
Marking Code: S43
Marking Code: S44
Marking Code: S45
MAXIMUM RATINGS (Per Diode)
T
J
= 25°C Unless otherwise noted
Rating
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol
V
RRM
V
R
I
F
I
FSM
P
tot
T
J
T
stg
Value
40
40
200
600
225
-55 to 125
-65 to 125
Units
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
thetaJA
Value
556
Units
°C/W
8/10/2005
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BAS40TW/ADW/CDW/SDW/RDW
ELECTRICAL CHARACTERISTICS (Per Diode)
Tj = 25°C Unless otherwise noted
Parameter
Breakdown Voltage (Note 1)
Symbol
V
BR
V
F
I
R
C
T
t rr
Conditions
I
BR
= 10uA
I
F
= 1.0mA
Forward Voltage (Note 1)
Reverse Leakage Current (Note 1)
Total Capacitance
Reverse Recovery Time
(See Figure 1)
I
F
= 10mA
I
F
= 40mA
V
R
= 25V
0Vdc Bias, f =1 MHz
I
F
= 10mA, I
R
= 10mA
R
L
= 100 Ohms;
measured at I
Rrec
= 1mA
Min
40
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
-
380
500
1000
1.0
5.0
5.0
uA
pF
ns
mV
Units
V
Note 1. Short duration pulse to minimize self-heating effect
820
Ω
+10 V
2 .0 k
Ω
100 µH
0 .1 µ F
I
F
0 .1 µ F
?
DUT
5 0
Ω
O u tp u t
P u ls e
G e n e ra to r
5 0
Ω
In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (I
F
) to 10mA
2. Input pulse is adjusted to I
R(peak)
is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
8/10/2005
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BAS40TW/ADW/CDW/SDW/RDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
100
T
A
= 125 °C
(uA)
T
A
= 125 °C
R
10
T
A
= 75 °C
(mA)
Reverse Leakage Current, I
F
10
Forward Current, I
1
1
T
A
= 75 °C
T
A
= -25 °C
0.1
T
A
= 25 °C
0.01
T
A
= -25 °C
T
A
= 25 °C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.001
0
10
20
30
40
Forward Voltage , V
F
(V)
Reverse Voltage, V
R
(V)
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
4
3.5
3
2.5
2
1.5
1
0.5
0
0
10
20
Reverse Voltage, V
R
(V)
Total Capacitance, C
T
(pF)
30
40
Fig. 4. Typical Capacitance
8/10/2005
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BAS40TW/ADW/CDW/SDW/RDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BAS40xxx T/R7 - 7" reel, 3K units per reel
BAS40xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
8/10/2005
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Microchip MCU
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