DATA SHEET
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts
FEATURE
N-channel enhancement mode field effect transistor,de-
.056(1.40)
.047(1.20)
CURRENT 200 mAmp
SOT-23
.119(3.00)
.110(2.80)
Unit: inch ( mm )
signed for high speed pulse amplifier and drive applica-
tion,which is manufactured by the N-channel DMOS pr-
ocess.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.007(.20) MIN.
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
MECHANICS DATA
High density cell design for low R
DS(ON)
Voltage controlled small signal switching.
Rugged and reliabale.
High saturation current capability.
High-speed switching.CMOS logic compatible.
CMOS logic compatible input.
Not thermal runaway.
No secondary breakdown.
1
G
2
S
.006(.15) MAX.
.020(.50)
.013(.35)
.044(1.10)
.035(.90)
D
3
Marking Code: S72
ABSOLUTE MAXIMUM RATING
TA=25
Unless otherwise noted
SYMBOL
V
DSS
V
DRG
V
GSS
I
D
P
D
T
J
,T
STG
R
JA
PARAMETER
Drain-Source Voltage
Drain-gate Voltage
Gate-Source Voltage
Maximum Drain Current-Continue
-Pulse
(Note1)
Maximum power Dissipation Derating Above 25
Operating and Storage Temperature Range
Thermal Risistance,Junction-to-Ambient
Note:
1.Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%.
Value
60
60
20
200
800
350
-55 to +150
357
.103(2.60)
.086(2.20)
Top View
UNIT
V
V
V
mA
mW
/W
STAD-SEP.14.2004
PAGE .
1
ELECTRICAL CHRACTERISTICS
TA=25
Unless otherwise noted
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS
=0V, ID=10
A
60
105
1.0
0.5
100
-100
V
A
mA
nA
nA
V
DS
=60V, V
GS
=0V, T
J
=25
V
DS
=60V, V
GS
=0V, T
J
=125
V
DS
=0, V
GS
=20V
V
DS
=0, V
GS
=-20V
ON CHARACTERISTIC(note1)
Gate Threshold Voltage
Static Drain-Source On-Resisitance
Drain-Source On-Voltage
On-State Drain Current
V
GS(th)
R
DS(ON)
V
DS(ON)
I
D(ON)
G
FS
V
DS
=V
GS
, I
D
=250
A
1
2.1
3.7
2.5
7.5
3.75
1.5
500
80
V
mA
mS
V
V
GS
=10V, I
D
=500mA, T
J
=25
V
GS
=10V, I
D
=500mA
V
GS
=5.0V, I
D
=50mA
V
GS
=10V, V
DS
2V
DS(ON)
V
DS
2V
DS(ON)
, I
D
=200mA
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
C
ISS
C
OSS
C
RSS
T
ON
T
OFF
V
DD
=30V,R
L
=25 , I
D
=500mA
V
GS
=10V, R
GEN
=25
V
DS
=25V, V
GS
=0V, F=1.0MHz
50
25
5
20
20
pF
pF
pF
ns
ns
STAD-SEP.14.2004
PAGE . 2
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
TA = 25°C
I D, DRAIN CURRENT (AMPS)
VGS = 10 V
9V
8V
7V
6V
5V
4V
3V
9.0
10
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
-55°C
125°C
25°C
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VGS = 10 V
ID = 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VDS = VGS
ID = 1.0 mA
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
STAD-SEP.14.2004
PAGE .
3
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