DATA SHEET
1N5926B~1N5939B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE
FEATURES
• Low profile package
1.0(25.4)MIN.
11 to 39 Volts
POWER
1.5 Watts
DO-41
Unit: inch(mm)
• Built-in strain relief
• Low inductance
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Both normal and Pb free product are available :
Pb free: 98.5% Sn above
Normal : 80~95% Sn, 5~20% Pb
.034(.86)
.028(.71)
MECHANICALDATA
1.0(25.4)MIN.
.205(5.2)
.160(4.1)
.107(2.7)
.080(2.0)
Case: JEDEC DO-41,Molded plastic over passivated junction.
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes positive end (cathode)
Standard packing: 52mm tape
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
P ar m et r
a
e
D C P ow erD i si aton on T
A
=75
O
C , easur atZer Lead Lengt
s p i
M
e
o
h
D er t above 75
O
C (N O TE 1)
ae
O per tng Juncton and S t r geTem per t r R ange
ai
i
oa
aue
S ym bol
Val e
u
1.
5
- 5 t +150
5 o
U nis
t
W ats
t
O
P
D
T
J
,T
STG
C
NOTES:
1.Mounted on 5.0mm2 (.013mm thick) land areas.
STAD-JUN.23.2004
PAGE . 1
N o m i a l Z e ne r V o l a g e
n
t
P ar N um ber
t
ZT
V
Z
@ I
M a xi um Z e ne r I p e d a nce
m
m
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
mA
34.
1
31.
2
28.
8
25.
0
23.
4
20.
8
18.
7
17.
0
15.
6
13.
9
12.
5
11.
4
10.
4
9.
6
O hm s
550
550
550
600
600
650
650
650
700
700
750
800
850
900
mA
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
0. 5
2
M axi um
m
Leakage C urent
r
I
R
uA
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
V
R
V
8.
4
9.
1
9.
9
11.
4
12.
2
13.
7
15.
2
16.
7
18.
2
20.
6
22.
8
25.
1
27.
4
29.
7
N om . V
1N 5926B
1N 5927B
1N 5928B
1N 5929B
1N 5930B
1N 5931B
1N 5932B
1N 5933B
1N 5934B
1N 5935B
1N 5936B
1N 5937B
1N 5938B
1N 5939B
11.
0
12.
0
13.
0
15.
0
16.
0
18.
0
20.
0
22.
0
24.
0
27.
0
30.
0
33.
0
36.
0
39.
0
M i .V
n
10.
5
11.
4
12.
4
14.
3
15.
2
17.
1
19.
0
20.
9
22.
8
25.
7
28.
5
31.
4
34.
2
37.
1
M a x. V
11.
6
12.
6
13.
7
15.
8
16.
8
18.
9
21.
0
23.
1
25.
2
28.
4
31.
5
34.
7
37.
8
41.
0
O hm s
5.
5
6.
5
7.
0
9.
0
10.
0
12.
0
14.
0
17.
5
19.
0
23.
0
26.
0
33.
0
38.
0
45.
0
STAD-JUN.23.2004
PAGE . 2
qvz,
TEMPERATURE COEFICENT (mV/
O
C)
MAXIMUM POWER DISSIPATION, Watts
2.5
2
1.5
1
0.5
0
10
8
6
4
2
0
-2
-4
2
4
6
8
10
12
V @I
Z ZT
0
20
40
60
80
100
120 140 150 180
LEAD TEMPERATURE, C
O
V , ZENER VOLTAGE (VOLTS)
Z
Fig.1 Steady State Power Derating
Fig.2 T
emperature coeeficient v.s. zener voltage,Vz(V)
qvz,
TEMPERATURE COEFICENT (mV/
O
C)
200
100
70
50
30
20
10
10
20
30
50
V @I
Z
ZT
Zz, DYNAMIC IMPEDANCE (OHMS)
1K
500
200
100
50
20
10
5
2
1
0.5
1
2
5
10
20
T = 25
O
C
J
I (rms) =0.1 I (dc)
Z
Z
22V
12V
6.8V
50
100 200
500
Vz, ZENER VOLTAGE (VOLTS)
Iz, ZENER TEST CURRENT (mA)
Fig.3 T
emperature coeeficient v.s. zener voltage,Vz(V)
F i g . 4 Z
ener impedance v.s. zener current
1K
200
100
70
50
30
20
10mA
I Z (dc)=1mA
Ppk, PEAKSURGE POWER (WATTS)
Zz, DYNAMIC IMPEDANCE (OHMS)
500
300
200
100
50
30
20
10
0.1 0.20.3 0.5
RECTANGULAR
NONREPETITIVE
WAVEFORM
O
T J =25 C PRIOR
TO INTIAL PULSE
10
7
5
3
2
20mA
I Z (rms)=0.1I Z (dc)
5
7
10
20 3 0
40
50 60
70
100
1
2 3
5
10 20 30 50
100
Vz, ZENER VOLTAGE (VOLTS)
PW, PULSE WIDTH (ms)
F i g . 5 Z
ener impedance v.s. zener voltage
Fig.6 Maximum Surge Power
STAD-JUN.23.2004
PAGE . 3
100
Iz, ZENER CURRENT (mA)
100
Iz, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
10
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0 .1
0
10
20
30
40
Vz, ZENER VOLTAGE (VOLTS)
Vz, ZENER VOLTAGE (VOLTS)
Fig.7 Vz = 6.8 thru 10 Volts
Fig.8 Vz = 12 thru 82 Volts
NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT
Nominal zener voltage is measured with the device function in thermal equilibrium with ambient
O
temperature at 25 C
NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION
Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied.
The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz
STAD-JUN.23.2004
PAGE . 4
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