PJB75N75
75V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=11mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: D
2
PAK / TO-263 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : B75N75
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
Li mi t
75
+20
75
350
105
6 2 .5
-5 5 to +1 5 0
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
P
D
T
J
,T
S T G
E
AS
R
θ
J C
R
θ
J A
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
C
Avalanche Energy with Single Pulse
I
AS
=47A, VDD=37.5V, L=0.3mH
660
1 .2
62
O
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
Note: 1. Maximum DC current limited by the package
O
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.11.2007
PAGE . 1
PJB75N75
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x. U ni t s
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
BV
D SS
V
G S (th)
V
G S
= 0 V , I
D
= 2 5 0 u A
V
D S
= V
G S
, I
D
= 2 5 0 u A
V
G S
=10V, I
D
=30A
75
1
-
O
-
-
8.0
-
-
-
-
-
-
3
11
V
V
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e
R e s i s t a nc e
R
D S (o n)
V
G S
=10V, I
D
=30A, Tc=125 C
V
D S
=75V, V
G S
=0V
V
D S
=75V, V
G S
=0V, Tc=125
O
C
V
G S
=+2 0 V, V
D S
=0 V
V
D S
> I
D ( O N )
X R
D S ( O N ) m a x
, I
D
= 1 5 A
m
Ω
-
-
-
-
20
20
1
uA
10
+100
-
nΑ
S
Ze r o Ga te Vo lta g e D r a i n
C ur r e nt
Gate Body Leakage
Forward Transconductance
I
D S S
I
G S S
g
fS
Dynamic
To t a l G a t e C h a r g e
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n D e l a y Ti m e
Tu r n - O n R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
Tu r n - O f f F a l l Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r
C a p a c i t a nc e
Q
g
Q
g s
Q
g d
t
d (o n)
t
r
t
d (o ff)
t
f
C
iss
C
oss
C
rs s
V
D S
=2 5 V, V
G S
=0 V
f=1 .0 MH
Z
V
D D
=30V , R
L
=15
Ω
I
D
=2A , V
G E N
=10V
R
G
=2.5
Ω
V
D S
= 3 0 V , I
D
= 3 0 A
V
G S
=10V
-
-
-
-
-
-
-
-
-
-
83
8 .9
24.3
18.2
15.6
7 0 .5
1 3 .8
3150
300
240
-
-
-
22
20
ns
90
18
-
-
-
pF
nC
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
I
s
V
SD
V
DD
R
L
V
OUT
-
I
S
= 3 0 A , V
G S
= 0 V
-
-
-
0 .8 5
75
1 .5
V
DD
R
L
A
V
D i o d e F o rwa rd Vo lta g e
Switching
Test Circuit
V
IN
Gate Charge
Test Circuit
V
GS
R
G
1mA
R
G
STAD-JUN.11.2007
PAGE . 2
PJB75N75
Typical Characteristics Curves (T
A
=25
O
C,unless otherwise noted)
100
I
D
- Drain-to-Source Current (A)
10V
6.0V
100
5.0V
I
D
- Drain Source Current (A)
V
DS
=10V
V
DS
=10V
80
60
4.5V
80
60
40
20
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
- Gate-to-Source Voltage (V)
4.0V
40
3.5V
20
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
3.0V
T
J
= 25
o
C
T
J
=
125 C
O
T
J
=-55
O
C
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
10
50
R
DS(ON)
- On-Resistance (m
W
)
9.5
9
8.5
8
7.5
7
6.5
6
0
20
40
60
80
100
I
D
- Drain Current (A)
R
DS(ON)
- On-Resistance (m
W
)
I
D
=30A
40
V
GS
=10V
30
20
T
J
=125
O
C
10
T
J
=25
O
C
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
6000
R
DS(ON)
- On-Resistance
(Normalized)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
C - Capacitance (pF)
V
GS
=10V
I
D
=30A
5000
4000
Ciss
3000
2000
1000
Crss
0
Coss
V
GS
=0V
f=1MHz
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
T
J
- Junction Tem perature (
o
C)
V
DS
- Drain-to-Source Voltage (V)
FIG.5- On Resistance vs Junction Temperature
FIG.6 - Capacitance
STAD-JUN.11.2007
PAGE . 3
PJB75N75
V
GS
- Gate-to-Source Voltage (V)
10
I
S
- Source Current (A)
8
V
DS
=30V
I
D
=30A
100
V
GS
=0V
10
6
T
J
=125
O
C
1
4
T
J
=25
O
C
T
J
=-55
O
C
2
0
0
10
20
30
40
50
60
70
80
90
Q
g
- Gate Charge (nC)
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
- Source-to-Drain Voltage (V)
Fig.7 - Gate Charge
Fig.10 - Source-Drain Diode Forward Voltage
Breakdown Voltage (NORMALIZED)
1.2
V
th
- G-S Threshold Voltage (NORMALIZED)
1.2
I
D
=250uA
I
D
=250uA
1.15
1.1
1.05
1
0.95
0.9
-50
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75 100 125
T
J
- Junction Tem perature (
o
C)
150
BV
DSS
-
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (
o
C)
Fig.8 - Threshold Voltage vs Junction Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
100
90
80
I
D
- Drain Current (A)
1000
Rds(on) Limited
70
60
50
40
30
20
10
0
25
50
75
100
125
T
J
- Junction Temperature (
o
C)
150
Limited by Package
I
D
- Drain Current (A)
100
100us
10
DC
1ms
10ms
1
0.1
0.1
1000
100
10
1
V
DS
- Drain-to-Source Voltage (V)
Fig.11 - Maximum Drain Current vs Junction Temperature
Fig.12 - Safe Operation Area
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-JUN.11.2007
PAGE . 4
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