PJ09N03D
25V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=9mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@30A=16mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 09N03D
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S TG
E
AS
R
θ
JC
R
θ
JA
Li mi t
25
+20
50
240
52
31
-5 5 to + 1 5 0
180
2 .4
50
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=27A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
C /W
O
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1
PJ09N03D
ELECTRICALCHARACTERISTICS
P a ra me te r
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
Ze r o G a t e Vo l t a g e D r a i n C ur r e nt
Gate Body Leakage
Forward Transconductance
D ynami c
V
D S
= 1 5 V , I
D
= 1 5 A , V
G S
= 5 V
To t a l G a t e C h a r g e
Q
g
-
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n D e l a y Ti m e
Tu r n - O n R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
Tu r n - O f f F a l l Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r C a p a c i t a n c e
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e
I
s
V
SD
-
I
S
= 3 0 A , V
G S
= 0 V
-
-
-
0 .9 1
50
1 .2
A
V
Q
gs
Q
gd
T
d ( o n)
t
rr
t
d (o ff)
t
f
C
iss
C
oss
C
rss
V
D S
= 1 5 V , V
GS
= 0 V
f=1 .0 MH
Z
V
DD
=15V , R
L
=15
Ω
I
D
=1A , V
GEN
=10V
R
G
=3.6
Ω
V
D S
= 1 5 V , I
D
= 1 5 A
V
GS
= 1 0 V
-
-
-
-
-
-
-
-
-
3 9 .0
6 .0
7 .6
13.0
10.4
4 1 .2
1 3 .4
2100
450
300
-
nC
-
-
14.6
12.4
ns
4 8 .6
1 5 .8
-
-
-
pF
-
2 2 .1
-
B V
DSS
V
G S ( t h)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
G S S
g
fS
V
G S
= 0 V , I
D
= 2 5 0 u A
V
D S
= V
G S
, I
D
= 2 5 0 u A
V
GS
=4.5V, I
D
=30A
V
GS
=10V, I
D
=30A
V
DS
=25V, V
GS
=0V
V
GS
= + 2 0 V , V
D S
= 0 V
V
D S
= 1 0 V , I
D
= 1 5 A
25
1
-
-
-
-
30
-
-
1 2 .5
6.5
-
-
-
-
3
1 6 .0
m
Ω
9.0
1
+100
-
uA
nA
S
V
V
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
STAD-JUN.19.2006
PAGE . 2
PJ09N03D
Typical Characteristics Curves (T
A
=25
O
C,unless otherwise noted)
I
D
- Drain-to-Source Current (A)
80
I
D
- Drain Source Current (A)
60
V
GS
= 4.5V, 5.0V, 6.0V, 10.0V
V
DS
=10V
50
40
30
20
10
0
60
4.0V
3.5V
40
T
J
=25
O
C
T
J
=125
O
C
T
J
=-55
O
C
3
3.5
4
4.5
20
3.0V
0
0
1
2
3
2.5V
4
5
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
50
30
R
DS(ON)
- On-Resistance (m
W
)
25
20
R
DS(ON)
- On-Resistance (m
W
)
I
D
=30A
40
30
20
10
V
GS
=4.5V
15
10
5
0
V
GS
=10V
T
J
=125
O
C
T
J
=25
O
C
0
0
20
40
60
80
2
4
6
8
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
1.6
FIG.4- On Resistance vs Gate to Source Voltage
3000
R
DS(ON)
- On-Resistance(Normalized)
1.4
C - Capacitance (pF)
V
GS
=10V
I
D
=30A
2500
2000
1500
1000
Ciss
V
GS
=0V
f=1MH
Z
1.2
1
Coss
500
Crss
0
0.8
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
T
J
- Junction Temperature (
o
C)
V
DS
- Drain-to-Source Voltage (V)
FIG.5- On Resistance vs Junction Temperature
FIG.6- Capacitance
STAD-JUN.19.2006
PAGE . 3
PJ09N03D
10
Vgs
Qg
V
GS
- Gate-to-Source Voltage (V)
8
6
4
2
0
V
DS
=15V
I
D
=15A
Vgs(th)
Qg(th)
Qsw
0
5
10
15
20
25
30
35
40
Qgs
Qgd
Qg
Q
g
- Gate Charge (nC)
Fig.7 - Gate Charge Waveform
V
th
- G-S Threshold Voltage (NORMALIZED)
Fig.8 - Gate Charge
33
32
31
30
29
28
-50
BV
DSS
- Breakdown Voltage (V)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
I
D
=250uA
I
D
=250uA
-25
0
25
50
75
100
o
125
150
-25
0
25
50
75
100
o
125
150
T
J
- Junction Temperature ( C)
T
J
- Junction Temperature ( C)
Fig.9 - Threshold Voltage vs Temperature
Fig.10 - Breakdown Voltage vs Junction Temperature
100
I
S
- Source Current (A)
V
GS
=0V
10
T
J
=125 C
O
T
J
=25
O
C
T
J
=-55 C
O
1
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig.11 - Source-Drain Diode Forward Voltage
STAD-JUN.19.2006
PAGE . 4
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