60V Dual
N-Channel
MOSFET
SSF6880Y
D1
D2
Main Product Characteristics
V
(BR)DSS
R
DS(ON)
I
D
60V
3Ω
300mA
D1
G2
S2
G1
G2
S1
G1
D2
SOT-563
S1
S2
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Ideal for high efficiency switched mode power supplies
Low on-resistance with low gate charge
Fast switching and reverse body recovery
Description
The SSF6880Y utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch
mode power supply and a wide variety of other applications.
Absolute Maximum Ratings
(T
C
=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25°C)
Drain Current – Continuous (T
C
=100°C)
Drain Current – Pulsed
1
Power Dissipation (T
C
=25°C)
Power Dissipation – Derate above 25°C
Storage Temperature Range
Operating Junction Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
unless otherwise specified)
Rating
60
±20
300
240
0.6
312
2.5
-55 to +150
-55 to +150
Unit
V
V
mA
mA
A
mW
mW/°C
°C
°C
Symbol
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient
Symbol
R
θJA
Typ.
---
Max.
400
Unit
°C/W
1/4
60V Dual
N-Channel
MOSFET
SSF6880Y
Electrical Characteristics
(T
J
=25°C
Parameter
Symbol
unless otherwise specified)
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
BV
DSS
V
GS
=0V, I
D
=250uA
60
---
---
---
---
---
0.05
---
---
---
---
---
1
10
±20
V
V/°C
uA
uA
uA
△BV
DSS
/
△T
J
Reference to 25°C, I
D
=1mA
V
DS
=48V, V
GS
=0V, T
J
=25°C
Drain-Source Leakage Current
I
DSS
V
DS
=48V, V
GS
=0V, T
J
=85°C
Gate-Source Leakage Current
I
GSS
V
GS
=±20V,
V
DS
=0V
On Characteristics
Static Drain-Source
On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
V
GS
=10V, I
D
=0.3A
R
DS(ON)
V
GS
=4.5V, I
D
=0.2A
V
GS(th)
V
GS
=V
DS
, I
D
=250uA
△V
GS(th)
---
3
---
mV/°C
---
1.2
1.3
2.0
4
2.5
V
---
1.1
3
Ω
Dynamic and Switching Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
=30V, V
GS
=0V, F=1MHz
---
---
---
23
16
10
46
32
20
pF
Drain-Source Diode Characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
I
S
V
G
=V
D
=0V, Force Current
I
SM
V
SD
V
GS
=0V, I
S
=0.2A, T
J
=25°C
---
---
---
---
600
1
mA
V
---
---
300
mA
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed, pulse width
≦
300uS, duty cycle
≦
2%.
3. Essentially independent of operating temperature.
2/4
60V Dual
N-Channel
MOSFET
SSF6880Y
Typical Electrical and Thermal Characteristic Curves
I
D
, Continuous Drain Current (A)
Normalized On Resistance (mΩ)
T
J
, Junction Temperature (°C)
Fig.2 Normalized R
DS(ON)
vs. T
J
V
GS
, Gate to Source Voltage (V)
Q
g
, Gate Charge (nC)
Fig.4 Gate Charge Waveform
I
D
, Continuous Drain Current (A)
Square Wave Pulse Duration (S)
Fig.5 Normalized Transient Impedance
3/4
T
C
, Case Temperature (°C)
Fig.1 Continuous Drain Current vs. T
C
Normalized Gate Threshold Voltage (V)
T
J
, Junction Temperature (°C)
Fig.3 Normalized V
th
vs. T
J
Normalized Thermal Response (R
θJA
)
V
DS
, Drain to Source Voltage (V)
Fig.6 Maximum Safe Operation Area
60V Dual
N-Channel
MOSFET
SSF6880Y
Package Outline Dimensions
SOT-563
Symbol
A
b
c
D
E
E1
e
L
Dimensions In Millimeters
MAX
0.600
0.300
0.180
1.700
1.250
1.700
0.5BSC
0.300
0.100
MIN
0.500
0.150
0.100
1.500
1.100
1.550
Dimensions In Inches
MAX
0.024
0.012
0.007
0.067
0.049
0.067
0.02BSC
0.012
0.004
MIN
0.020
0.006
0.004
0.059
0.043
0.061
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Doc.USSSF6880YxSP2.0
Dec. 2018
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