EN39SL160H/L
EN39SL160H/L
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With
4Kbytes Uniform Sector, CMOS 1.8 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range:1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2
μA
typical standby current
•
Uniform Sector Architecture:
- 512 sectors of 4-Kbyte / 2-Kword
- 32 blocks of 64-Kbyte / 32-Kword
- Any sector or block can be erased individually
•
WP#/ACC Input pin:
- Write protect (WP#) function allows protection
the first or last blocks, regardless of block
protect status
- Acceleration (ACC) function acceleration
program timing.
•
Block protection:
- Hardware locking of blocks to prevent
program or erase operations within individual
blocks
- Additionally, temporary Block Unprotect
allows code changes in previously locked
blocks.
•
-
-
-
-
High performance program/erase speed
Byte/Word program time: 5µs/7µs typical
Sector erase time: 90ms typical
Block erase time: 400ms typical
Chip erase time: 7 s typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector, Block and Chip Erase
•
Block Unprotect Mode
•
Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
•
Low Vcc write inhibit < 1.2V
•
Minimum 100K endurance cycle
•
-
-
-
Package Options
48-pin TSOP (Type 1)
48-ball 6mm x 8mm TFBGA
48-ball 4mm x 6mm WFBGA
•
Industrial temperature Range
GENERAL DESCRIPTION
The EN39SL160H/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.The
EN39SL160H/L features 1.8V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN39SL160H/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block
or full chip erase operation, where each block can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. E, Issue Date: 2009/07/13
EN39SL160H/L
Table 1. PIN DESCRIPTION
Pin Name
A0-A19
DQ0-DQ14
DQ15 / A-1
CE#
OE#
RESET#
RY/BY#
WE#
WP#/ACC
Vcc
Vss
NC
BYTE#
Addresses
15 Data Inputs/Outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
Chip Enable
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Hardware write protect/acceleration pin
Supply Voltage
(1.65-1.95V)
Ground
Not Connected to anything
Byte/Word Mode
WP#/ACC
Reset#
CE#
OE#
WE#
Byte#
RY/BY#
Figure 1. LOGIC DIAGRAM
EN39SL160H/L
Function
A0 - A19
DQ0 – DQ15
(A-1)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. E, Issue Date: 2009/07/13
EN39SL160H/L
Table 2. Uniform Sector / Block Architecture (Block 24 ~ 31)
Address Range
Block Sector
(X16)
511
510
509
508
507
506
505
504
503
502
501
500
499
498
497
496
495
30
480
479
29
….
(X8)
Sector Size
(Kwords / A19 A18 A17 A16 A15 A14 A13 A12 A11
Kbytes)
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
2/4
….
31
0FF800h-0FFFFFh 1FF000h–1FFFFFh
0FF000h-0FF7FFh 1FE000h–1FEFFFh
0FE800h-0FEFFFh 1FD000h–1FDFFFh
0FE000h-0FE7FFh 1FC000h–1FCFFFh
0FD800h-0FDFFFh 1FB000h–1FBFFFh
0FD000h-0FD7FFh 1FA000h–1FAFFFh
0FC800h-0FCFFFh 1F9000h–1F9FFFh
0FC000h-0FC7FFh 1F8000h–1F8FFFh
0FB800h-0FBFFFh 1F7000h–1F7FFFh
0FB000h-0FB7FFh 1F6000h–1F6FFFh
0FA800h-0FAFFFh 1F5000h–1F5FFFh
0FA000h-0FA7FFh 1F4000h–1F4FFFh
0F9800h-0F9FFFh 1F3000h–1F3FFFh
0F9000h-0F97FFh 1F2000h–1F2FFFh
0F8800h-0F8FFFh 1F1000h–1F1FFFh
0F8000h-0F87FFh
0F7800h-0F7FFFh
….
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
….
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
….
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
….
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
….
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
….
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
….
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
….
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
….
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
….
1F0000h–1F0FFFh
1EF000h–1EFFFFh
1E0000h–1E0FFFh
1DF000h–1DFFFFh
….
….
0F0000h-0F07FFh
0EF800h-0EFFFFh
….
2/4
2/4
….
1
1
….
1
1
….
1
1
….
1
0
….
0
1
….
0
1
….
0
1
….
0
1
….
0
1
….
464
463
28
….
0E8000h-0E87FFh
0E7800h-0E7FFFh
….
1D0000h–1D0FFFh
1CF000h–1CFFFFh
….
2/4
2/4
….
1
1
….
1
1
….
1
1
….
0
0
….
1
0
….
0
1
….
0
1
….
0
1
….
0
1
….
448
447
27
….
0E0000h-0E07FFh
0DF800h-0DFFFFh
….
1C0000h–1C0FFFh
1BF000h–1BFFFFh
….
2/4
2/4
….
1
1
….
1
1
….
1
0
….
0
1
….
0
1
….
0
1
….
0
1
….
0
1
….
0
1
….
432
431
26
….
0D8000h-0D87FFh
0D7800h-0D7FFFh
….
1B0000h–1B0FFFh
1AF000h–1AFFFFh
….
2/4
2/4
….
1
1
….
1
1
….
0
0
….
1
1
….
1
0
….
0
1
….
0
1
….
0
1
….
0
1
….
416
415
25
….
0D0000h-0D07FFh
0CF800h-0CFFFFh
….
1A0000h–1A0FFFh
19F000h–19FFFFh
….
2/4
2/4
….
1
1
….
1
1
….
0
0
….
1
0
….
0
1
….
0
1
….
0
1
….
0
1
….
0
1
….
400
399
398
397
….
0C8000h-0C87FFh
0C7800h-0C7FFFh
0C7000h-0C77FFh
0C6800h-0C6FFFh
….
190000h–190FFFh
18F000h–18FFFFh
18E000h–18EFFFh
18D000h–18DFFFh
….
2/4
2/4
2/4
2/4
….
1
1
1
1
….
1
1
1
1
….
0
0
0
0
….
0
0
0
0
….
1
0
0
0
….
0
1
1
1
….
0
1
1
1
….
0
1
1
0
….
0
1
0
1
….
24
386
385
384
0C1000h-0C17FFh
0C0800h-0C0FFFh
0C0000h-0C07FFh
182000h–182FFFh
181000h–181FFFh
180000h–180FFFh
2/4
2/4
2/4
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. E, Issue Date: 2009/07/13
微控制器 MCU
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