®
UTRON
Rev. 1.2
UT65L1616(E)/UT65L1616(I)
1M X 16 BITS LOW POWER PSEUDO SRAM
REVISION HISTORY
REVISION
Rev. 1.0
Rev. 1.1
Rev. 1.2
DESCRIPTION
Original.
Delete Partial refresh function
Add Package : 48-pin 12mmX20mm TSOP-I
Draft Date
Apr 15, 2003
Aug 06,2003
Dec 11,2003
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80080
1
®
UTRON
Rev. 1.2
UT65L1616(E)/UT65L1616(I)
1M X 16 BITS LOW POWER PSEUDO SRAM
GENERAL DESCRIPTION
The UT65L1616 is a 16,777,216-bit CMOS random
access memory organized as 1048,576 words by 16
bits. It is fabricated using PSEUDO SRAM techniques,
yields high-density and low power consumption
device.
The UT65L1616 is design for upper and low byte
access by data byte control (
UB
、
LB
).It has low
power modes by using control pin
ZZ
.
FEATURES
Access time : 60/70ns (max.)
Low operating power
Operating current : 22mA (typ)
Standby current : 50uA (typ) LL-version
Power supply voltage : 2.5V~3.3V
Operating temperature :
Extended(E) : -25
℃
~80
℃
Industrial(I) : -40
℃
~85
℃
Low power modes
Deep power Down: Isb < 10uA
Three state output and TTL compatible
Separated I/O power (Vccq) & Core Power (Vcc)
Page mode operation by 8 words
Data byte control :
LB
(I/O1~I/O8)
UB
(I/O9~I/O16)
Package : 48-pin 6.0mm × 8.0mm TFBGA
PIN DESCRIPTION
SYMBOL
A0 - A19
I/O1 - I/O16
CE
WE
OE
LB
UB
ZZ
V
CC
Vccq
V
SS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Low Power Modes
Core Power
I/O power
Ground
No Connection
FUNCTIONAL BLOCK DIAGRAM
1M×16
MEMORY
ARRAY
A0-A19
Vcc
Vccq
Vss
I/O1-I/O8
Lower Byte
I/O9-I/O16
Upper Byte
DECODER
I/O DATA
CIRCUIT
COLUMN I/O
PIN CONFIGURATION
A
CE
LB
I/O9
I/O10
OE
UB
I/O11
A0
A3
A5
A17
Vss
A14
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O2
I/O4
I/O5
I/O6
WE
A11
ZZ
I/O1
I/O3
Vcc
Vss
I/O7
I/O8
NC
OE
WE
LB
UB
ZZ
B
CONTROL
CIRCUIT
C
D
E
F
G
H
Vss
Vccq
I/O15
I/O16
I/O12
I/O13
I/O14
A19 A12
A8
A9
A18
1
2
3
4
5
6
TFBGA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80080
2
®
UTRON
Rev. 1.2
UT65L1616(E)/UT65L1616(I)
1M X 16 BITS LOW POWER PSEUDO SRAM
A13
A14
A15
A16
A17
A18
A1
A0
NC
NC
WE
ZZb
NC
UB
LB
A10
A9
A8
A7
A6
A5
A4
A3
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
UT65L1616
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A12
A19
Vss
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
Vcc
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
Vss
CE
A11
TSOP-I
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80080
3
®
UTRON
Rev. 1.2
UT65L1616(E)/UT65L1616(I)
1M X 16 BITS LOW POWER PSEUDO SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on any pin relative to V
SS
Voltage on Vcc supply relative to V
SS
Extended
Operating Temperature
Industrial
Storage Temperature
Power Dissipation
SYMBOL
V
IN
, V
OUT
V
CC
T
A
T
A
T
STG
P
D
RATING
-0.2 to Vcc+0.3
-0.2 to 4.2
-25 to 80
-40 to 85
-65 to 150
1.0
UNIT
V
V
℃
℃
℃
W
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE
OE
WE
LB
UB
ZZ
I/O OPERATION
SUPPLY CURRENT
I/O1-I/O8 I/O9-I/O16
High – Z
High – Z
D
OUT
High – Z
D
OUT
D
IN
High – Z
D
IN
High – Z
High – Z
High – Z
High – Z
D
OUT
D
OUT
High – Z
D
IN
D
IN
High – Z
I
SB
, I
SB1
I
CC
,I
CC1
,I
CC2
I
CC
,I
CC1
,I
CC2
H
L
L
L
L
L
L
L
L
X
X
H
H
L
L
L
X
X
X
X
X
H
H
H
H
H
L
L
L
X
X
L
X
L
H
L
L
H
L
X
X
X
L
H
L
L
H
L
L
X
H
H
H
H
H
H
H
H
H
L
Write
Deep Power Down
Note:
I
CC
,I
CC1
,I
CC2
I
SB0
H = V
IH
, L=V
IL
, X = Don't care.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80080
4
®
UTRON
Rev. 1.2
UT65L1616(E)/UT65L1616(I)
1M X 16 BITS LOW POWER PSEUDO SRAM
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.5V~3.3V)
PARAMETER
Power Voltage
I/O operating voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
Vccq
V
IH
*2*3
V
IL
I
LI
I
LO
V
OH
V
OL
Icc
Average Operating
Current
*1*3
TEST CONDITION
V
SS
≦
V
IN
≦
V
CC
V
SS
≦
V
I/O
≦
V
CC;
Output Disable
I
OH
= -1mA
I
OL
= 2mA
Cycle time=Min,100%duty, I
I/O
=0mA
MIN.
2.5
2.5
1.8
2.2
-0.2
-1
-1
2.2
-
-
TYP.
3.0
3.0
2.0
-
-
-
-
2.7
-
22
MAX.
3.3
3.3
2.5
V
CC
+0.2
0.4
1
1
-
0.4
30
UNIT
V
V
V
V
µA
µA
V
V
mA
CE
=V
IL
,
ZZ
= V
IH
, V
IN
=V
IL
or V
IH
Cycle time=1µs,100%duty, I
I/O
=0mA
Icc1
I
SB
I
SB1
I
SB0
CE
≦
0.2V,
ZZ
= V
IH
V
IN
≦
0.2V or V
IN
≧
Vcc-0.2V
-
-
-
-
-
-
50
-
7
0.3
70
10
mA
mA
µA
µA
Standby Current (TTL)
Standby Current (CMOS)
Deep Power Down
CE
=
ZZ
=V
IH,
other inputs =V
IL
or V
IH
CE
≧
Vcc-0.2 ,
ZZ
≧
Vcc-0.2V
other inputs = 0 ~ Vcc
LL
ZZ
≦
0.2V, other pins = 0 ~ Vcc
No refresh
LL
Note :
*1.Overshoot : Vcc+1.0V in case of pulse width
≦
20ns.
*2.Undershoot : -1.0V in case of pulse width
≦
20ns.
*3.Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
(T
A
=25
℃
, f=1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80080
5
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