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30BQ060

器件型号:30BQ060
器件类别:分立半导体    二极管   
文件大小:129KB,共6页
厂商名称:International Rectifier ( Infineon )
厂商官网:http://www.irf.com/
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器件描述

3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB

参数
参数名称属性值
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码DO-214AB
包装说明R-PDSO-C2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY, FREE WHEELING DIODE
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.52 V
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值正向电流1200 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)245
认证状态Not Qualified
最大重复峰值反向电压60 V
最大反向电流20000 µA
表面贴装YES
技术SCHOTTKY
端子面层Tin/Lead (Sn/Pb)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30
Base Number Matches1

文档预览

Bulletin PD-20408 07/04
30BQ060PbF
SCHOTTKY RECTIFIER
3 Amp
I
F(AV)
= 3.0Amp
V
R
= 60V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ t
p
= 5 µs sine
V
F
T
J
@ 3.0 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The 30BQ060PbF surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Value
3.0
60
1200
0.52
- 55 to 150
Case Styles
30BQ060PbF
SMC
www.irf.com
1
30BQ060PbF
Bulletin PD-20408 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
30BQ060PbF
60
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
30BQ
3.0
4.0
Units Conditions
A
50% duty cycle @ T
L
= 123 °C, rectangular wave form
50% duty cycle @ T
L
= 113 °C, rectangular wave form
A
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1.0A, L = 10mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current @ T
C
= 25°C
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
1200
130
5.0
1.0
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
30BQ
0.58
0.76
0.52
0.66
Units Conditions
V
V
V
V
mA
mA
pF
nH
V/µs
@ 3A
@ 6A
@ 3A
@ 6A
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
V
R
= rated V
R
T
J
= 125 °C
T
J
= 25 °C
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
0.5
20
Max. Junction Capacitance
Typical Series Inductance
180
3.0
10000
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
(**)
46
°C/W DC operation
30BQ
- 55 to 150
12
Units
°C
°C
°C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 150
R
thJL
Max. Thermal Resistance
Junction to Lead
R
thJA
Max. Thermal Resistance
Junction to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.24(0.008) g (oz.)
SMC
IR3H
Similar to DO-214AB
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
www.irf.com
30BQ060PbF
Bulletin PD-20408 07/04
10
100
10
1
0.1
0.01
0.001
0
T = 150˚C
J
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
Reverse Current - I
R
(mA)
(A)
1
10
20
30
40
50
Reverse Voltage - V
R
(V)
60
T
J
= 150˚C
T
J
= 125˚C
Junction Capacitance - C
T
(p F)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
T = 25˚C
J
T = 25˚C
J
100
0.1
0.1
10
0.2
0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage Drop - V
FM
(V)
0.9
0
10
20
30
40
50
60
70
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Fig. 1 - Max. Forward Voltage Drop
Characteristics (Per Leg)
100
(°C/W)
Thermal Impedance Z
thJC
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
1
Single Pulse
(Thermal Resistance)
t1
t2
0.1
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
www.irf.com
3
30BQ060PbF
Bulletin PD-20408 07/04
160
Allowable Lead Temperature (°C)
Average Power Loss (Watts)
2.5
2
1.5
150
140
130
120
110
100
90
80
70
0
1
2
3
4
5
Average Forward Current - I
F(AV)
(A)
see note (2)
80% Square Wave
(D = 0.50)
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS Limit
1
0.5
0
DC
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
(A)
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
Non-Repetitive Surge Current - I
FSM
100
10
100
1000
10000
Square Wave Pulse Duration - T
p
(Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
www.irf.com
30BQ060PbF
Bulletin PD-20408 07/04
Outline Table
Device Marking: IR3H
2.75 (.108)
3.15 (.124)
5.59 (.220)
6.22 (.245)
CATHODE
ANODE
6.60 (.260)
7.11 (.280)
.152 (.006)
.305 (.012)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
7.75 (.305)
8.13 (.320)
.102 (.004)
.203 (.008)
1
2
1 POLARITY
2 PART NUMBER
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR3H
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
www.irf.com
5
与30BQ060相近的元器件有:30BQ060TR、30BQ060PBF、30BQ060TRPBF。描述及对比如下:
型号 30BQ060 30BQ060TR 30BQ060PBF 30BQ060TRPBF
描述 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB 4 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB 4 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB 4 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB
是否Rohs认证 不符合 不符合 符合 符合
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
零件包装代码 DO-214AB DO-214AB DO-214AB DO-214AB
包装说明 R-PDSO-C2 R-PDSO-C2 LEAD FREE, SMC, SIMILAR TO DO-214AB, 2 PIN R-PDSO-C2
针数 2 2 2 2
Reach Compliance Code compliant compliant not_compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.52 V 0.52 V 0.52 V 0.76 V
JEDEC-95代码 DO-214AB DO-214AB DO-214AB DO-214AB
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e0 e0 e3 e3
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 1200 A 1200 A 1200 A 1200 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C
最大输出电流 4 A 4 A 4 A 4 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 245 245 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 60 V 60 V 60 V 60 V
表面贴装 YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) MATTE TIN
端子形式 C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30
Base Number Matches 1 1 1 1
最大反向电流 20000 µA 20000 µA 20000 µA -
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