BC856
PNP
Small Signal
Transistor
Features
Low Current
Low Voltage
RoHS Compliant
C
E
Applications
For General Purpose Amplifier Applications
B
Package:SOT-23
Schematic Diagram
Absolute Maximum Ratings
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
(T
A
= 25 °C unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-80
-65
-5.0
-100
350
150
-55½150
Unit
V
V
V
mA
mW
℃
℃
h
FE
Classifications
h
FE
Classifications
Symbol
h
FE
Range
A
125½250
B
220½475
1/4
BC856
PNP
Small Signal
Transistor
Electrical Characteristics
Parameter
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
(1)
Collector to Emitter Saturation
Voltage
(2)
Base to Emitter Saturation
Voltage
(1)
Base to Emitter Saturation
Voltage
(2)
Base to Emitter Voltage
(ON)1
Base to Emitter Voltage
(ON)2
Transition Frequency
Collector Output Capacitance
Noise Figure
(T
A
= 25 °C unless otherwise noted)
Symbol
I
CBO
h
FE
Test Conditions
V
CB
=-30 V
V
CE
=-5.0V
I
E
=0
I
C
=-2.0mA
I
B
=-0.5mA
I
B
=-5.0mA
I
B
=-0.5mA
I
B
=-5.0mA
I
C
=-2.0mA
I
C
=-10mA
I
C
=10mA
I
E
=0
I
C
=-0.1mA
f=1.0KHz
Min
Typ
Max
-0.015
Unit
μA
125
-0.09
-0.25
-0.7
-0.9
-0.6
-0.65
475
-0.3
-0.65
V
V
V
V
-0.75
-0.82
150
4.5
2.0
10
V
V
MHz
pF
dB
V
CE(sat)(1)
I
C
=-10mA
V
CE(sat)(2)
I
C
=-100mA
V
BE(sat)(1)
V
BE(sat)(2)
V
BE(ON)1
V
BE(ON)2
f
T
C
ob
NF
I
C
=-10mA
I
C
=-100mA
V
CE
=-5.0V
V
CE
=-5.0V
V
CE
=-5.0V
f=100MHz
V
CB
=-10V
f=1.0MHz
V
CE
=-6.0V
R
g
=2KΩ
2/4
BC856
PNP
Small Signal
Transistor
Electrical Characteristic Curve
3/4
BC856
PNP
Small Signal
Transistor
Package Dimensions
SOT-23
www.goodarksemi.com
4/4
Doc.USBC856x2.0
详细参数
全文预览
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
