2N2907/2N2907A
PNP Switching Transistors
Features
•
High current (max. 600 mA)
•
Low voltage (max. 60 V)
•
NPN complements: 2N2222 and 2N2222A
3
1
handbook, halfpage
2
Collector
3
2
Base
Applications
•
Switching and linear amplification
Emitter
1
Package: TO-18
Schematic Diagram
Maximum Ratings
Symbol
V
CBO
V
CEO
(T
A
= 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
2N2907
2N2907A
Conditions
Open Emitter
Open Base, I
C
< − 100 mA
Min.
−
−
−
−
−
−
−
Max.
- 60
- 40
- 60
-5
- 600
- 800
- 200
400
1.2
+150
+200
+150
Unit
V
V
V
V
mA
mA
mA
mW
W
°C
°C
°C
V
EBO
I
C
I
CM
I
BM
P
tot
T
STG
T
J
T
A
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Open Collector
T
A
≤ 25 °C
T
C
≤ 25 °C
−
−
- 65
−
- 65
Thermal Characteristics
Symbol
R
th j-a
R
th j-c
Parameter
Thermal Resistance - Junction
to
Ambient
Thermal Resistance - Junction
to
Case
Conditions
in free air
Value
438
146
Unit
K/W
K/W
1/4
2N2907/2N2907A
PNP Switching Transistors
Electrical Characteristics
(T
A
=25°C unless otherwise noted）
Symbol
I
CBO
2N2907
I
CBO
Collector Cut-off Current
2N2907A
I
EBO
h
FE
Emitter Cut-off Current
DC
Current Gain
2N2907
I
E
= 0, V
CB
=
−50
V
I
E
= 0, V
CB
=
−50
V, T
amb
= 150
°C
I
C
= 0, V
EB
=
−5
V
V
CE
=
−10
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−150
mA; note 1
I
C
=
−500
mA; note 1
h
FE
DC
Current Gain
2N2907A
V
CE
=
−10
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−150
mA; note 1
I
C
=
−500
mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Collector Capacitance
Emitter Capacitance
Transition Frequency
I
C
=
−150
mA, I
B
=
−15
mA; note 1
I
C
=
−500
mA, I
B
=
−50
mA; note 1
I
C
=
−150
mA, I
B
=
−15
mA; note 1
I
C
=
−500
mA, I
B
=
−50
mA; note 1
I
E
= i
e
=0,
V
CB
=
−10
V, f = 1 MHz
I
C
= i
c
=0,
V
EB
=
−2
V, f = 1 MHz
I
C
=
−50
mA, V
CE
=
−20
V, f = 100 MHz;
note 1
I
Con
=
−150
mA, I
Bon
=
−15
mA,
I
Boff
= 1 5 m A
−
−
200
75
100
100
100
50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
mV
V
V
V
pF
pF
MHz
35
50
75
100
30
−
−
−
300
−
−
−
−10
−10
−50
nA
µA
nA
Parameter
Collector Cut-off Current
I
E
= 0, V
CB
=
−50
V
I
E
= 0, V
CB
=
−50
V, T
amb
= 150
°C
−
−
−20
−20
nA
µA
Conditions
Min.
Max.
Unit
Switching
Times
(between 10% and 90% levels)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs, δ ≤
0.02.
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
−
−
−
−
−
−
45
15
35
300
250
50
ns
ns
ns
ns
ns
ns
2/4
2N2907/2N2907A
PNP Switching Transistors
Test
Circuits
VBB
RB
VCC
RC
oscilloscope
Vi
(probe)
450
Ω
R2
R1
Vo
(probe)
450
Ω
oscilloscope
DUT
V
i
=
−9.5
V, T = 500
µs,
t
p
= 1 0
µ
s, t
r
= t
f
≤
3 ns.
R1 = 68
Ω,
R2 = 325
Ω,
R
B
= 325
Ω,
R
C
= 160
Ω.
V
BB
= 3.5 V, V
CC
=
−29.5
V.
Oscilloscope input impedance Z
i
= 5 0Ω.
Test circuit for switching times.
3/4
2N2907/2N2907A
PNP Switching Transistors
Package Outline Dimensions
TO-18
Metal-can cylindrical single-ended package, 3 leads
j
B
α
seating plane
w
M
A
M
B
M
1
k
b
2
3
D
1
a
A
D
A
L
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
5.31
4.74
a
2.54
b
0.47
0.41
D
5.45
5.30
D1
4.70
4.55
j
1.03
0.94
k
1.1
0.9
L
15.0
12.7
w
0.40
α
45°
OUTLINE
VERSION
SOT18/13
REFERENCES
IEC
B11/C7 type 3
JEDEC
TO-18
EIAJ
EUROPEAN
PROJECTION
www.goodarksemi.com
4/4
Doc.US2N2907-2N2907AxUD1.0
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