ESMT
Flash
FEATURES
Single supply voltage 2.7~3.6V
Standard and Dual SPI
Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz / 86MHz / 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz
(100MHz / 172MHz / 200MHz equivalent Dual SPI)
Low power consumption
- Active current: 35 mA
- Standby current: 30
μ
A
- Deep Power Down current: 5
μ
A
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Byte programming time: 7
μ
s (typical)
- Page programming time: 1.5 ms (typical)
Erase
- Chip erase time 25 sec (typical)
- Block erase time 1 sec (typical)
- Sector erase time 90 ms (typical)
Page Programming
- 256 byte per programmable page
F25L32PA
3V Only 32 Mbit Serial Flash Memory with Dual
Lockable 512 bytes OTP security sector
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25L32PA –50PAG
F25L32PA –86PAG
F25L32PA –100PAG
F25L32PA –50PHG
F25L32PA –86PHG
F25L32PA –100PHG
Speed
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
Package
8 lead SOIC
8 lead SOIC
8 lead SOIC
16 lead SOIC
16 lead SOIC
16 lead SOIC
200mil
200mil
200mil
300mil
300mil
300mil
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The F25L32PA is a 32Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard and Dual
Serial Peripheral Interface (SPI). ESMT’s memory devices
reliably store memory data even after 100,000 programming and
erase cycles.
The memory array can be organized into 16,384 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 1024 uniform sectors with 4K byte each; 64
uniform blocks with 64K byte each. Sectors can be erased
individually without affecting the data in other sectors. Blocks can
be erased individually without affecting the data in other blocks.
Whole chip erase capabilities provide the flexibility to revise the
data in the device. The device has Sector, Block or Chip Erase
but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2009
Revision: 1.2
1/36
ESMT
PIN DESCRIPTION
Symbol
SCK
Pin Name
Serial Clock
Serial Data Input /
Serial Data Input Output 0
Functions
F25L32PA
To provide the timing for serial input and output operations
To transfer commands, addresses or data serially into the device. Data is
latched on the rising edge of SCK (for Standard mode). / Bidirectional IO pin to
transfer commands, addresses or data serially into the device on the rising
edge of SCK and read data or status from the device on the falling edge of
SCK(for Dual mode).
To transfer data serially out of the device. Data is shifted out on the falling edge
of SCK (for Standard mode). / Bidirectional IO pin to transfer commands,
addresses or data serially into the device on the rising edge of SCK and read
data or status from the device on the falling edge of SCK (for Dual mode).
To activate the device when CE is low.
The Write Protect (
WP
) pin is used to enable/disable BPL bit in the status
register.
To temporality stop serial communication with SPI flash memory without
resetting the device.
To provide power.
SI / SIO
0
SO / SIO
1
Serial Data Output /
Serial Data Input Output 1
Chip Enable
Write Protect
Hold
Power Supply
Ground
CE
WP
HOLD
V
DD
V
SS
FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
High Voltage
Generator
Memory
Array
Page Buffer
Status
Register
Byte Address
Latch / Counter
Y-Decoder
Command and Conrol Logic
Serial Interface
CE
SCK
SI
(SIO
0
)
SO
(SIO
1
)
WP
HOLD
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2009
Revision: 1.2
3/36
GD32 MCU
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