PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=13mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@30A=18mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-220 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : P75N06
Drain
PIN Assignment
Gate
1. Gate
2. Drain
3. Source
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S TG
E
AS
R
θ
JC
R
θ
JA
Li mi t
60
+20
75
350
105
6 2 .5
-5 5 to + 1 5 0
400
1 .2
62
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=40A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
C /W
O
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1
PJP75N06
ELECTRICALCHARACTERISTICS
P a ra me te r
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
Ze r o G a t e Vo l t a g e D r a i n C ur r e nt
Gate Body Leakage
Forward Transconductance
D ynami c
V
D S
= 3 0 V , I
D
= 3 0 A , V
G S
= 5 V
To t a l G a t e C h a r g e
Q
g
-
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n D e l a y Ti m e
Tu r n - O n R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
Tu r n - O f f F a l l Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r C a p a c i t a n c e
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e
I
s
V
SD
-
I
S
= 3 0 A , V
G S
= 0 V
-
-
-
0 .9 8
75
1 .5
A
V
Q
gs
Q
gd
T
d ( o n)
t
rr
t
d (o ff)
t
f
C
iss
C
oss
C
rss
V
D S
= 2 5 V , V
GS
= 0 V
f=1 .0 MH
Z
V
DD
=30V , R
L
=15
Ω
I
D
=2A , V
GEN
=10V
R
G
=2.5
Ω
V
D S
= 3 0 V , I
D
= 3 0 A
V
GS
= 1 0 V
-
-
-
-
-
-
-
-
-
82
10
13.5
18.5
16.5
60
9 .0
4200
810
550
-
nC
-
-
25
20
ns
90
20
-
-
-
pF
-
42
-
B V
DSS
V
G S ( t h)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
G S S
g
fS
V
G S
= 0 V , I
D
= 2 5 0 u A
V
D S
= V
G S
, I
D
= 2 5 0 u A
V
GS
=4.5V, I
D
=30A
V
GS
=10V, I
D
=30A
V
DS
=60V, V
GS
=0V
V
GS
= + 2 0 V , V
D S
= 0 V
V
D S
= 1 0 V , I
D
= 1 5 A
60
1
-
-
-
-
40
-
-
1 3 .5
10.5
-
-
-
-
3
1 8 .0
m
Ω
13.0
1
+100
-
uA
nA
S
V
V
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
STAD-JUN.19.2006
PAGE . 2
PJP75N06
Typical Characteristics Curves (T
A
=25
O
C,unless otherwise noted)
100
I
D
- Drain-to-Source Current (A)
80
3.5V
60
40
3.0V
20
2.5V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Source Current (A)
V
GS
=4.0V, 4.5V, 5.0V, 6.0V, 10.0V
80
V
DS
=10V
60
40
T
J
=25
O
C
20
T
J
=125
O
C
0
1
1.5
2
2.5
T
J
=-55
O
C
3
3.5
4
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
30
50
R
DS(ON)
- On-Resistance (m
W
)
25
20
15
10
R
DS(ON)
- On-Resistance (m
W
)
I
D
=30A
40
30
V
GS
=4.5V
20
10
0
2
4
T
J
=125
O
C
V
GS
=10V
5
0
0
20
40
60
80
100
I
D
- Drain Current (A)
T
J
=25
O
C
6
8
10
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance
(Normalized)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=10V
I
D
=30A
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
FIG.5- On Resistance vs Junction Temperature
STAD-JUN.19.2006
PAGE . 3
PJP75N06
V
GS
- Gate-to-Source Voltage (V)
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
Q
g
- Gate Charge (nC)
Vgs
Qg
V
DS
=30V
I
D
=30A
Vgs(th)
Qg(th)
Qsw
Qgs
Qgd
Qg
Fig.6 - Gate Charge Waveform
76
Fig.7 - Gate Charge
V
th
- G-S Threshold Voltage (NORMALIZED)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
BV
DSS
- Breakdown Voltage (V)
I
D
=250uA
I
D
=250uA
74
72
70
68
66
64
62
-50
-25
0
25
50
75 100 125
T
J
- Junction Tem perature (
o
C)
150
-25
0
25
50
75
100
125
150
T
J
- Junction Tem perature (
o
C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
100
V
GS
=0V
I
S
- Source Current (A)
10
T
J
=125
O
C
1
T
J
=-55
O
C
T
J
=25
O
C
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
1.6
Fig.10 - Source-Drain Diode Forward Voltage
LEGAL STATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUN.19.2006
PAGE . 4
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