PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=9mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@30A=12mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-202,Method 208
• Marking : 09N03
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
D S
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S T G
E
AS
R
θ
J C
R
θ
J A
Li mi t
25
+20
50
240
45
26
-5 5 to + 1 5 0
130
2 .8
50
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=23A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
C /W
O
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-MAY.29.2006
PAGE . 1
PJD09N03
ELECTRICALCHARACTERISTICS
P a ra me te r
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
Ze r o G a t e Vo l t a g e D r a i n C ur r e nt
Gate Body Leakage
Forward Transconductance
Dynamic
V
D S
= 1 5 V , I
D
= 1 5 A , V
G S
= 5 V
To t a l G a t e C h a r g e
Q
g
-
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n D e l a y Ti m e
Tu r n - O n R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
Tu r n - O f f F a l l Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r C a p a c i t a n c e
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e
I
s
V
SD
-
I
S
= 3 0 A , V
G S
= 0 V
-
-
-
0 .9 4
30
1 .2
A
V
Q
g s
Q
g d
T
d ( o n )
t
rr
t
d (o ff)
t
f
C
iss
C
oss
C
rs s
V
D S
=1 5 V, V
G S
=0 V
f=1 .0 MH
Z
V
D D
=15V , R
L
=15
Ω
I
D
=1A , V
G E N
=10V
R
G
=3.6
Ω
V
D S
= 1 5 V , I
D
= 1 5 A
V
G S
=10V
-
-
-
-
-
-
-
-
-
2 7 .5
3 .5
7 .2
10.0
11.0
35
11 . 2
1250
240
185
-
nC
-
-
13.0
14.0
ns
45
1 5 .5
-
-
-
pF
-
1 6 .0
-
BV
D SS
V
G S (th)
R
D S (o n)
R
D S (o n)
I
D S S
I
G S S
g
fS
V
G S
= 0 V , I
D
= 2 5 0 u A
V
D S
= V
G S
, I
D
= 2 5 0 u A
V
G S
=4.5V, I
D
=30A
V
G S
=10V, I
D
=30A
V
D S
=25V, V
G S
=0V
V
G S
=+2 0 V, V
D S
=0 V
V
D S
= 1 0 V , I
D
= 1 5 A
25
1
-
-
-
-
25
-
-
9 .5
6.5
-
-
-
-
3
1 2 .0
m
Ω
9.0
1
+100
-
uA
nA
S
V
V
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
STAD-MAY.29.2006
PAGE . 2
PJD09N03
Typical Characteristics Curves (T
A
=25
O
C,unless otherwise noted)
I
D
- Drain-to-Source Current (A)
80
80
I
D
- Drain Source Current (A)
V
GS
=10V, 6.0V, 5.0V, 4.5V, 4.0V
60
V
DS
=10V
3.5V
60
40
40
T
J
=125 C
O
3.0V
20
20
2.5V
0
T
J
=25 C
O
T
J
=-55 C
O
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
20
50
R
DS(ON)
- On-Resistance (m
W
)
R
DS(ON)
- On-Resistance (m
W
)
I
D
=30A
15
40
10
V
GS
=4.5V
30
20
125
o
C
T
J
=125 C
O
5
V
GS
=10V
10
T
J
=25
C
T
J
=25
o
C
O
0
0
0
20
40
60
80
2
4
6
8
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
1.6
1.4
1.2
V
GS
=10V
I
D
=30A
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
FIG.5- On Resistance vs Junction Temperature
STAD-MAY.29.2006
PAGE . 3
PJD09N03
10
Vgs
Qg
V
GS
- Gate-to-Source Voltage (V)
8
6
4
2
0
V
DS
=15V
I
D
=15A
Vgs(th)
Qg(th)
Qgs
Qsw
0
5
10
15
20
25
30
Qgd
Qg
Q
g
- Gate Charge (nC)
Fig.6 - Gate Charge Waveform
V
th
- G-S Threshold Voltage (NORMALIZED)
Fig.7 - Gate Charge
BV
DSS
- Breakdown Voltage (V)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
I
D
=250uA
29
I
D
=250uA
28
27
26
-25
0
25
50
75
100
125
150
25
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
T
J
- Junction Temperature (
o
C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
100
V
GS
=0V
I
S
- Source Current (A)
10
T
J
=125
O
C
1
T
J
=25
O
C
T
J
=-55
O
C
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
LEGALSTATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-MAY.29.2006
PAGE . 4
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