Silan
Semiconductors
1/3 DUTY GENERAL-PURPOSE LCD
DRIVER
DESCRIPTION
The SC75823 is a general-purpose LCD driver that can be used
for frequency display in microprocessor-controlled radio receives
and in other display applications. In addition to being able to directly
drive up to 156 LCD segments.
SC75823
QFP-64-14x14-0.8
FEATURES
•
Supports both 1/3 duty 1/2 bias and 1/3 duty 1/3 bias LCD
drive of up to 156 segments under serial data control.
•
Serial data input supports CCB format communication with the
system controller.
•
Serial data control of the power-saving mode based backup
function and all the segments forced off function.
•
High generality since display data is displayed directly without
decoder intervention.
•
The
INH
pin can force the display to the off state.
•
The LCD drive bias voltage can be provided internally or
externally.
•
Power supply voltage: 4.5 to 6.0V
LQFP-64-10 x 10-0.5
ORDERING INFORMATION
Device
SC75823A
SC75823B
Package
LQFP-64-10 X 10-0.5
QFP-64-14 X 14-0.8
BLOCK DIAGRAM
COM1 COM2 COM3
S52
S51
S1
V
DD1
Common Driver
V
DD2
Latch & Driver
INH
Shift Register
OSC
Clock
Generator
Address
Detector
DI
CL
CE
V
DD
V
SS
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1
2002.03.04
1
Silan
Semiconductors
PIN CONFIGURATION
S48
S47
S46
S45
S44
S43
S42
S41
S40
S39
S38
S37
S36
S35
S34
34
SC75823
S33
33
32 S32
31 S31
30 S30
29 S29
28 S28
27 S27
26 S26
25 S25
24 S24
23 S23
22 S22
21 S21
20 S20
19 S19
18 S18
17 S17
16
S16
48
S49 49
S50 50
S51 51
S52 52
COM1 53
COM2 54
COM3 55
V
DD
56
INH 57
V
DD1
58
V
DD2
59
V
SS
60
OSC 61
CE 62
CL 63
DI 64
1
S1
47
46
45
44
43
42
41
40
39
38
37
36
35
SC75823
2
S2
3
S3
4
S4
5
S5
6
S6
7
S7
8
S8
9
S9
10
S10
11
S11
12
S12
13
S13
14
S14
15
S15
ABSOLUTE MAXIMUM RATINGS
(Tamb=25°C, V
SS
=0 V)
Characteristics
Maximum Supply Voltage
Input Voltage
Output Voltage
Output Current
Allowable Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
DDmax
V
IN1
V
IN2
V
OUT
I
OUT1
I
OUT2
P
Dmax
T
opr
T
stg
Value
-0.3 to +6.5
-0.3 to +6.5
-0.3 to V
DD
+0.3
-0.3 to V
DD
+0.3
300
3
200
-40 to +85
-55 to 125
Unit
V
V
V
V
µA
mA
mW
°C
°C
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1
2002.03.04
2
Silan
Semiconductors
ALLOWABLE OPERATING RANGE
(Tamb=-40 to +85°C, V
SS
=0V)
Characteristics
Supply Voltage
Input Voltage
Input High level Voltage
Input Low Level Voltage
Recommended External Resistance
Recommended External Capacitance
Guaranteed Oscillator Range
Data Setup Time
Data Hold Time
CE Wait Time
CE Setup Time
CE Hold Time
High-level Clock Pulse Width
Low-level Clock Pulse Width
Rise Time
Fall Time
INH
Switching Time
SC75823
Symbol
V
DD
V
DD1
V
DD2
V
IH
V
IL
R
OSC
C
OSC
f
OSC
tds
tdh
tcp
tcs
tch
tφH
tφL
tr
tf
t2
Test Condition
V
DD
V
DD1
V
DD2
CE, CL, DI,
INH
CE, CL, DI,
INH
OSC
OSC
OSC
CL, DI: figure 2
CL, DI: figure 2
CE, CL: figure 2
CE, CL: figure 2
CE, CL: figure 2
CL: figure 2
CL: figure 2
CE, CL, DI: figure 2
CE, CL, DI: figure 2
INH
, CE: figure 3
Min.
4.5
Typ.
2/3V
DD
1/3V
DD
Max.
6.0
6.0
6.0
6.0
0.7
Unit
V
V
V
V
V
kΩ
pF
4.0
0
47
1000
19
100
100
100
100
100
100
100
100
100
10
38
76
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ELECTRICAL CHARACTERISTICS
Characteristics
Input High Level Current
Input Low Level Current
Oscillator Frequency
Hysteresis Width
Output High Level Voltage
Output Low Level Voltage
Output High Level Voltage
Output Low Level Voltage
Symbol
I
IH
I
IL
f
OSC
V
H
V
OH1
V
OL1
V
OH2
V
OL2
V
MID1
Test Condition
CE, CL, DI,
INH
; V
I
=6V
CE, CL, DI,
INH
; V
I
=0V
OSC;R
OSC
=47kΩ,
C
OSC
=1000pF
CE, CL, DI,
INH
; V
DD
=5V
S1 to S52; I
O
=-20µA
S1 to S52; I
O
=20µA
COM1 to COM3; I
O
=-100µA
COM1 to COM3; I
O
=100µA
1/2 bias, COM1 to COM3;
I
O
=±100µA
1/3 bias, COM1 to COM3;
I
O
=±100µA
Min.
Typ.
Max.
5
Unit
µA
µA
-5
38
0.3
V
DD
-1.0
1.0
V
DD
-1.0
1.0
1/2V
DD
±1.0
2/3V
DD
±1.0
kHz
V
V
V
V
V
V
V
(To be continued)
Intermediate Level Voltage
V
MID2
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1
2002.03.04
3
Silan
Semiconductors
(Continued)
SC75823
Test Condition
1/3 bias, COM1 to COM3;
I
O
=±100µA
1/3
1/3
bias,
bias,
S1
S1
to
to
S52;
S52;
I
O
=±20µA
I
O
=±20µA
Power saving mode
f=38kHz, 1/2 bias, V
DD
=5V
f=38kHz, 1/3 bias, V
DD
=5V
f=38kHz, 1/2 bias, V
DD
=6V
f=38kHz, 1/3 bias, V
DD
=8V
400
300
650
580
Characteristics
Symbol
V
MID3
Min.
1/3V
DD
±1.0
2/3V
DD
±1.0
1/3V
DD
±1.0
Typ.
Max.
Unit
V
V
V
Intermediate Level Voltage*
V
MID4
V
MID5
I
DD1
I
DD2
5
800
600
1300
1200
µA
µA
µA
µA
µA
Supply Current
I
DD3
I
DD2
I
DD3
Note: * Except the bias voltage generation divider resistors that are built into V
DD1
and V
DD2
.(see figure 1)
Figure 1
V
DD
V
DD1
To the common segment driver
V
DD2
Except these resistors
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1
2002.03.04
4
Silan
Semiconductors
Fig 2
1.When CL is stopped at the low level
SC75823
CE
V
IH
V
IL
t¶H
t¶L
V
IH
V
IL
tr
tf
tcp
tcs
tch
V
IH
CL
V
IH
50%
V
IL
DI
V
IH
V
IL
tds
V
IH
V
IL
tdh
2.When CL is stopped at the high level
CE
V
IH
V
IL
t¶L
t¶H
V
IH
V
IL
tr
tf
tcp
tcs
tch
V
IH
CL
V
IH
50%
V
IL
V
IH
DI
V
IL
tds
V
IH
V
IL
tdh
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1
2002.03.04
5
测试/测量
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