MOSFET 100V 200mW
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Diodes |
产品种类 Product Category | MOSFET |
RoHS | N |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-323-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 170 mA |
Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | 20 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 300 mW |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | Reel |
高度 Height | 1 mm |
长度 Length | 2.2 mm |
产品 Product | MOSFET Small Signal |
Transistor Type | 1 N-Channel |
类型 Type | FET |
宽度 Width | 1.35 mm |
Forward Transconductance - Min | 0.08 S, 0.37 S |
Fall Time | 8 ns |
NumOfPackaging | 2 |
Rise Time | 8 ns |
工厂包装数量 Factory Pack Quantity | 3000 |
Typical Turn-Off Delay Time | 13 ns |
Typical Turn-On Delay Time | 8 ns |
单位重量 Unit Weight | 0.000176 oz |
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