AME
AME8863
n
General Description
The AME8863 family of positive, linear regulators fea-
ture low quiescent current (30µA typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-26 package is attractive for "Pocket"
and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" of operating conditions.
An additional feature is a "Power Good" detector, which
pulls low when the output is out of regulation.
The AME8863 is stable with an output capacitance of
2.2µF or greater.
600mA CMOS LDO
n
Functional Block Diagram
IN
OUT
Overcurrent
Shutdown
Thermal
Shutdown
EN
Vrefx110%
PG
R1
AMP
R2
Vref x90%
Vref
GND
n
Features
l
Very Low Dropout Voltage
l
Guaranteed 600mA Output
l
Accurate to within 1.5%
l
30µA Quiescent Current
l
Over-Temperature Shutdown
l
Current Limiting
l
Short Circuit Current Fold-back
l
Power Good Output Function
l
Power-Saving Shutdown Mode
l
Space-Saving SOT-26
l
Factory Pre-set Output Voltages
l
Low Temperature Coefficien
l
All AME's Lead Free Products Meet RoHS
Standards
n
Typical Application
INPUT
OUTPUT
IN
OUT
AME8863
PG
GND
EN
C1
1µF
C2
2.2µF
n
Applications
l
Instrumentation
l
Portable Electronics
l
Wireless Devices
l
Cordless Phones
l
PC Peripherals
l
Battery Powered Widgets
l
Electronic Scales
Rev.C.03
1
AME
AME8863
n
Ordering Information
Part Number
AME8863AEEY150
AME8863AEEY150L
AME8863AEEY150Z
AME8863AEEY150Y
AME8863AEEY180
AME8863AEEY180L
AME8863AEEY180Z
AME8863AEEY180Y
AME8863AEEY300
AME8863AEEY300L
AME8863AEEY300Z
AME8863AEEY300Y
AME8863AEEY330
AME8863AEEY330L
AME8863AEEY330Z
AME8863AEEY330Y
600mA CMOS LDO
Marking*
AZYww
AZYww
AZYww
AZYww
AZRww
AZRww
AZRww
AZRww
AZZww
AZZww
AZZww
AZZww
AZJww
AZJww
AZJww
AZJww
Output Voltage
1.5V
1.5V
1.5V
1.5V
1.8V
1.8V
1.8V
1.8V
3.0V
3.0V
3.0V
3.0V
3.3V
3.3V
3.3V
3.3V
Package
SOT-26
TSOT-26
SOT-26
TSOT-26
SOT-26
TSOT-26
SOT-26
TSOT-26
SOT-26
TSOT-26
SOT-26
TSOT-26
SOT-26
TSOT-26
SOT-26
TSOT-26
Operating Ambient
Temperature Range
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
Note: ww represents the date code and pls refer to Date Code Rule before Package Dimension.
* A line on top of the first letter represents lead free plating such as AZYww
Please consult AME sales office or authorized Rep./Distributor for output voltage and package type availability.
Rev.C.03
3
AME
AME8863
n
Absolute Maximum Ratings
Parameter
Input Voltage
Output Current
Output Voltage
ESD Classification
600mA CMOS LDO
Maximum
7
P
D
/ (V
IN
- V
O
)
GND - 0.3 to V
IN
+ 0.3
B*
Unit
V
A
V
Caution: Stress above the listed absolute rating may cause permanent damage to the device.
* HBM B:2000V~3999V
n
Recommended Operating Conditions
Parameter
Ambient Temperature Range
Junction Temperature Range
Storage Temperature Range
Symbol
T
A
T
J
T
STG
Rating
- 40 to +85
- 40 to +125
- 65 to +150
Unit
o
C
C
C
o
o
n
Thermal Information
Parameter
Thermal Resistance *
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
Internal Power Dissipation
Maximum Junction Temperature
Solder Iron (10 Sec)**
SOT-26
Conductive Epoxy
Package
Die Attach
Symbol
θ
JC
θ
JA
P
D
Maximum
81
Unit
o
C/W
260
o
C/W
mW
o
400
150
350
C
C
o
* Measure
θ
JC
on center of molding compound if IC has no tab.
** MIL-STD-202G 210F
4
Rev.C.03
AME
AME8863
n
Electrical Specifications
T
A
= 25
O
C unless otherwise noted
Parameter
Input Voltage
Output Voltage Accuracy
Dropout Voltage
Output Current
Current Limit
Short Circuit Current
Quiescent Current
Ground Pin Current
Line Regulation
Load Regulation
Over Temerature Shutdown
Over Temerature Hysterisis
V
O
Temperature Coefficient
Power Supply Rejection
Symbol
V
IN
V
O
V
DROPOUT
I
O
I
LIM
I
SC
I
Q
I
GND
REG
LINE
REG
LOAD
OTS
OTH
TC
I
O
=100mA
PSRR
C
O
=2.2µF
ceramic
f=10Hz to 100kHz
I
O
=10mA
f=1kHz
f=10kHz
f=100kHz
Co=2.2µF
2.0
0
I
O
=1mA
V
IN
=V
O
+1 to V
O
+2
I
O
=600mA
V
O
=V
O(NOM)
-2.0%
I
O
=1mA
1.4V<=V
O(NOM)
<=2.0
2.0V<V
O(NOM)
<=2.8V
2.8V<V
O(NOM)
600
600
800
300
30
35
-0.15
-0.1
0.02
0.2
150
30
30
75
55
30
30
Vin
0.4
0.1
0.5
0.5
1
1
6
0.4
µVrms
V
V
µA
µA
µA
µA
V
V
dB
0.15
0.1
1
600
50
Test Condition
Min
Note 1
-1.5
See
chart
Typ
Max
6
1.5
1400
800
600
mA
mA
mA
µA
µA
%
%
o
o
600mA CMOS LDO
Units
V
%
mV
V
O
>1.2V
V
O
>1.2V
V
O
<0.8V
I
O
=0mA
I
O
=1mA to 600mA
1.4V < V
O
<= 2.0V
2.0V < V
O
< 4.0V
I
O
=1mA to 600mA
C
C
ppm/
o
C
Output Voltage Noise
EN Input Threshold
EN Input Bias Current
Shutdown Supply Current
PG Leakage Current
PG Voltage Rating
PG Voltage Low
eN
V
EH
V
EL
I
EH
I
EL
I
SD
I
LC
V
PG
V
OL
V
IN
=2.7V to 6V
V
IN
=2.7V to 6V
V
EN
=V
IN
, V
IN
=2.7V to 6V
V
EN
=0V, V
IN
=2.7V to 6V
V
IN
=5V, V
O
=0V, V
EN
<V
EL
V
PG
=6V
V
O
in regulation
I
SINK
=0.4mA
Note1:V
IN(min)
=V
OUT
+V
DROPOUT
Note2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be
applied before a current source load is applied.
Rev.C.03
5
MEMS传感器
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