8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | LCC |
| 包装说明 | CHIP CARRIER, R-CQCC-N15 |
| 针数 | 18 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 130 mJ |
| 外壳连接 | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 8 A |
| 最大漏源导通电阻 | 0.24 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CQCC-N15 |
| 元件数量 | 1 |
| 端子数量 | 15 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 32 A |
| 认证状态 | Not Qualified |
| 参考标准 | MIL-19500/601 |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| JANSG2N7261U | IRHE3130 | IRHE7130 | IRHE4130 | IRHE8130 | JANSF2N7261U | JANSH2N7261U | JANSR2N7261U | |
|---|---|---|---|---|---|---|---|---|
| 描述 | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 A, 100 V, 0.185 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 零件包装代码 | LCC | LCC | LCC | LCC | LCC | LCC | LCC | LCC |
| 包装说明 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 |
| 针数 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| Reach Compliance Code | unknow | unknow | unknown | compli | compli | unknown | compli | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 130 mJ | 130 mJ | 130 mJ | 130 mJ | 130 mJ | 130 mJ | 130 mJ | 130 mJ |
| 外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
| 最大漏源导通电阻 | 0.24 Ω | 0.24 Ω | 0.18 Ω | 0.24 Ω | 0.24 Ω | 0.24 Ω | 0.24 Ω | 0.18 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 32 A | 32 A | 32 A | 32 A | 32 A | 32 A | 32 A | 32 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | - | - | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C | 150 °C | - | 150 °C | - |
| Base Number Matches | - | - | 1 | 1 | 1 | 1 | - | 1 |
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