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F49L320UA-70TIG

产品描述Flash, 2MX16, 70ns, PDSO48, 20 X 12 MM, LEAD FREE, TSOP-1, 48 PIN
产品类别存储    存储   
文件大小543KB,共55页
制造商台湾晶豪(ESMT)
官网地址http://www.esmt.com.tw/
标准
晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司,于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务,并已于 2002 年 3 月在台湾证券交易所挂牌上市。
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F49L320UA-70TIG概述

Flash, 2MX16, 70ns, PDSO48, 20 X 12 MM, LEAD FREE, TSOP-1, 48 PIN

F49L320UA-70TIG规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码TSOP1
包装说明20 X 12 MM, LEAD FREE, TSOP-1, 48 PIN
针数48
Reach Compliance Codeunknown
ECCN代码3A991.B.1.A
最长访问时间70 ns
备用内存宽度8
启动块TOP
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PDSO-G48
长度18.4 mm
内存密度33554432 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模8,63
端子数量48
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2MX16
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装等效代码TSSOP48,.8,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行PARALLEL
电源3/3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度1.2 mm
部门规模8K,64K
最大待机电流0.0001 A
最大压摆率0.05 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
切换位YES
类型NOR TYPE
宽度12 mm
Base Number Matches1

F49L320UA-70TIG文档预览

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ESMT
Flash
1. FEATURES
Single supply voltage 2.7V-3.6V
Fast access time: 70/90 ns
4,194,304x8 / 2,097,152x16 switchable by
BYTE
pin
Compatible with JEDEC standard
- Pin-out, packages and software commands compatible with
single-power supply Flash
Low power consumption
- 20mA typical active current
- 25uA typical standby current
100,000 program/erase cycles typically
20 Years Data Retention
Command register architecture
- Byte Word Programming (9μs/11μs typical)
- Byte Mode : eight 8KB, sixty three 64KB sectors.
- Word Mode : eight 4K word, sixty-three 32 K word sectors.
Auto Erase (chip & sector) and Auto Program
- Any combination of sectors can be erased concurrently;
Chip erase also provided.
- Automatically program and verify data at specified address
Erase Suspend/Erase Resume
- Suspend or Resume erasing sectors to allow the
read/program in another sector
Secured Silicon Sector
- 128word sector for permanent, secure identification through
an 8- word random Electronic Serial Number
- May be programmed and locked at the factory or by the
customer
- Accessible through a command sequence.
F49L320UA/F49L320BA
Operation Temperature Condition -40
°
C~85
°
C
32 Mbit (4M x 8/2M x 16)
3V Only CMOS Flash Memory
Ready/Busy (RY/
BY
)
- RY/
BY
output pin for detection of program or erase operation
completion
End of program or erase detection
- Data polling
- Toggle bits
Hardware reset
- Hardware pin (
RESET
) resets the internal state machine to
the read mode
Sector Protection /Unprotection
- Hardware Protect/Unprotect any combination of sectors from
a program or erase operation.
Low V
CC
Write inhibit is equal to or less than 2.0V
Boot Sector Architecture
- U = Upper Boot Block
- B = Bottom Boot Block
Packages available:
- 48-pin TSOPI
-
All Pb-free products are RoHS-Compliant
CFI (Common Flash Interface) complaint
- Provides device-specific information to the system, allowing
host software to easily reconfigure to different Flash devices.
-
-
2. ORDERING INFORMATION
Part No
F49L320UA-70TIG
F49L320BA-70TIG
Boot
Upper
Bottom
Speed Package Comments
Part No
70 ns
TSOPI
Pb-free
F49L320UA-90TIG
70 ns
TSOPI
Pb-free
F49L320BA-90TIG
Boot
Upper
Bottom
Speed
90 ns
90 ns
Package
TSOPI
TSOPI
Comments
Pb-free
Pb-free
3. GENERAL DESCRIPTION
The F49L320UA/F49L320BA is a 32 Megabit, 3V only CMOS
Flash memory device organized as 4M bytes of 8 bits or 2M
words of 16bits. This device is packaged in standard 48-pin
TSOP. It is designed to be programmed and erased both in
system and can in standard EPROM programmers.
With access times of 70 ns and 90 ns, the
F49L320UA/F49L320BA allows the operation of high-speed
microprocessors. The device has separate chip enable
CE
, write
enable
WE
, and output enable
OE
controls. ESMT’s memory
devices reliably store memory data even after 100,000 program
and erase cycles.
The F49L320UA/F49L320BA is entirely pin and command set
compatible with the JEDEC standard for 32 Megabit Flash
memory devices. Commands are written to
The F49L320UA/F49L320BA features a sector erase architecture.
The device array is divided into eight 8KB, sixty-three 64KB for
byte mode. The device memory array is divided into eight 4K
word, sixty-three 32K word sectors for word mode. Sectors can
be erased individually or in groups without affecting the data in
other sectors. Multiple-sector erase and whole chip erase
capabilities provide the flexibility to revise the data in the
device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory. This can be achieved in-system or via programming
equipment.
A low V
CC
detector inhibits write operations on loss of power.
End of program or erase is detected by the Ready/Busy status
pin, Data Polling of DQ7, or by the Toggle Bit I feature on DQ6.
Once the program or erase cycle has been successfully
completed, the device internally resets to the Read mode. The
command register using standard microprocessor write
timings.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008
Revision: 1.1
1/55
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