1SS265
Band switching diode
Features
1. Low differential forward resistance
2. Low diode capacitance
3. High reverse impedance
Applications
Band switching in VHF-tuners
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
DC Reverse voltage
Average rectified current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
R
I
O
P
d
T
j
T
stg
Value
35
100
150
150
-55…+150
Unit
V
mA
MW
℃
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
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