BC847BS
NPN GENERAL PURPOSE DUAL TRANSISTOR
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
•
0.054(1.35)
0.045(1.15)
0.087(2.20)
0.074(1.90)
0.010(0.25)
45 Volts
POWER
150 mWatts
SOT-363
Unit
：
inch(mm)
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.006 grams
• Marking : 47S
0.056(1.40)
0.047(1.20)
0.040(1.00)
0.031(0.80)
0.030(0.75)
0.021(0.55)
0.010(0.25)
0.003(0.08)
0.012(0.30)
0.005(0.15)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
C ollector - Emi tter Voltage
C ollector - Base Voltage
Emi tter - Base Voltage
C ollector C urrent - C onti nuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
6.0
100
Uni ts
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Total Device Dissipation
Per Device FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
300
150
3.0
328
-55 to 150
-55 to 150
Units
mW
mW/
O
C
O
0.044(1.10)
MAX.
C/W
O
C
C
O
Note 1: FR-4 board 70 x 60 x 1mm.
REV.0.1-MAR.9.2009
0.087(2.20)
0.078(2.00)
0.018(0.45)
0.006(0.15)
PAGE . 1
BC847BS
ELECTRICAL CHARACTERISTICS (T
J
=25
O
C, unless otherwise noted)
PA RA M E TE R
O F F C H A R A C T E R IS T IC S
C o lle c to r - E mi tte r B re a k d o wn
Vo lta g e
C o lle c to r - E mi tte r B re a k d o wn
Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E mi tte r - B a s e B re a k d o wn Vo lta g e
C o l l e c t o r C ut o f f C ur r e nt
O N C H A R A C T E R IS T IC S
D C C ur r e nt G a i n
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
B a s e - E mi tte r Vo lta g e
S M A L L - S IG N A L C H A R A C T E R IS T IC S
C ur r e nt - G a i n- B a nd w i d t h P r o d uc t
O ut p ut C a p a c i t a nc e
f
T
C
obo
NF
I
C
= 1 0 m A , V
C E
= 5 . 0 V d c , f = 1 0 0 M H
Z
V
C B
=1 0 V,f=1 .0 MH
Z
I
C
= 0 . 2 m A , V
C E
= 5 . 0 V d c ,
R
S
=2 .0 k
Ω
,f=1 .0 k H
Z
,
B W =2 0 0 H
Z
100
-
-
-
-
4 .5
MH
Z
pF
h
F E
V
C E (S AT)
V
B E ( S AT)
V
B
E (ON)
I
C
= 2 . 0 m A , V
C E
= 5 V
I
C
= 1 0 m A , I
B
= 0 . 5 m A
I
C
= 1 0 0 m A , I
B
= 5 . 0 m A
I
C
= 1 0 m A , I
B
= 0 . 5 m A
I
C
= 1 0 0 m A , I
B
= 5 . 0 m A
I
C
= 2 m A , V
C E
= 5 . 0 V
I
C
= 1 0 m A , V
C E
= 5 . 0 V
200
-
0 .6
0 .8
580
-
-
-
-
-
-
660
-
450
0 .2 5
0 .6
0 .9
1 .0
700
770
-
V
V
mV
V
(B R )C E O
V
(B R )C E S
V
(B R )C B O
V
(B R )E B O
I
C B O
I
C
= 1 0 m A
I
C
= 1 0 u A , V
E B
= 0
I
C
= 1 0 u A
I
E
= 1 0 u A
V
C B
=3 0 V,
V
C B
= 3 0 V, T
A
= 1 5 0
O
C
45
50
50
6 .0
-
-
-
-
-
-
-
-
-
-
15
5 .0
V
V
V
V
nA
uA
S ym b o l
Te s t C o n d i t i o n
M IN .
T YP.
MA X .
U ni t
N o i s e F i g ur e
-
-
10
dB
6
5
4
1
2
3
Fig.54
REV.0.1-MAR.9.2009
PAGE . 2
BC847BS
ELECTRICAL CHARACTERISTICS CURVE
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.5
1.0
V
CE
=10V
O
T
A
=25 C
V, VOLTAGE (VOLTS)
T
A
=25 C
0.8
O
1.0
0.8
0.6
V
BE
(sat) @ I
C
/I
B
=10
V
BE
(on) @ V
CE
=10V
0.6
0.4
0.4
0.3
0.2
V
CE
(sat) @ I
C
/I
B
=10
0.2 0.3 0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0
0.1
I
C
, COLLECTOR CURRENT(mAdc)
Figure 1. Normalized DC Current Gain
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT(mAdc)
Figure 2. "Saturation" and " On " Voltages
1.0
2.0
T
A
=25 C
1.6
O
O
qVB,
TEMP ERAT URE COEF FICIE NT (mA/ C)
-55
O
C to 125
O
C
1.2
200mA
1.2
1.6
I
C
=
I
C
=
10mA
2
0mA
0.8
50mA
100mA
2.0
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
10
7.0
400
300
200
C, CAPAC ITANCE (pF)
T
A
=25 C
Cio
O
50
30
Cob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
=10V
O
T
A
=25 C
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
1.0
2.0
3.0
5.0 7.0 10
20
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain-Bandwidth Product
REV.0.1-MAR.9.2009
PAGE . 3
BC847BS
ELECTRICAL CHARACTERISTICS CURVE
1.0
r(t), TRANS IENT THERM AL
RESISTANCE(N ORMAL IZED)
D-0.5
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
t2
Z
q
JA
(t)=r(t) R
q
JA
R
q
JA
=328
O
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
-TC=P
(pk)
R
q
JC
(t)
0.01
0.01
DUTY CYCLE, D-t1/t2
SINGEL PULSE
0
1.0
10
100
1.0K
t, TIME(ms)
Figure 7. Thermal Response
-200
0.001
10K
100K
1.0M
I
C
, COLLEC TOR CURRE NT (mA)
1s
3ms
-100
-50
T
A
=25 C
O
T
J
=25
O
C
-10
-5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate Ic-Vce limits of the
transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
O
The data of Figure 26 is based upon Tj(pk)=150 C; Tc or
Ta is variable depending upon conditions. Pulse curves are
O
valid for duty cycles to 10% prodided Tj(pk) < 150 C. Tj(pk)
may be calculated from the data in Figure 25. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary break-down.
-2.0
-1.0
-5.0
-10
-30
-45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE(V)
Figure 8. Active Region Safe Operating Area
REV.0.1-MAR.9.2009
PAGE . 4
BC847BS
MOUNTING PAD LAYOUT
SOT-363
Unit
：
inch(mm)
0.018
(0.45)
0.020
(0.50)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-MAR.9.2009
0.075
(1.90)
PAGE . 5
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