BAS40TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
4
5
6
2
1
3
FEATURES
Maximum forward voltage @ 10mA of 0.5V
Maximum leakage current @ 25V of 1.0uA
Reverse voltage rating of 40V
SOT- 363
APPLICATIONS
Rail-to-rail ESD protection
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
Isolated Triple
Various
Configurations
(See Diagrams
Below)
BAS40TW
5
4
BAS40ADW
Common Anode
Common Cathode
BAS40CDW
6
5
4
BAS40SDW
Series
6
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
Marking Code: S40
Marking Code: S42
Marking Code: S43
Marking Code: S44
MAXIMUM RATINGS (Per Diode)
T
J
= 25°C Unless otherwise noted
Rating
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol
V
RRM
V
R
I
F
I
FSM
P
tot
T
J
T
stg
Value
40
40
200
600
225
-55 to 125
-65 to 125
Units
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
thetaJA
Value
556
Units
°C/W
June 13.2012-REV.01
Page 1
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BAS40TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode)
Tj = 25°C Unless otherwise noted
Parameter
Breakdown Voltage (Note 1)
Symbol
V
BR
V
F
I
R
C
T
t rr
Conditions
I
BR
= 10uA
I
F
= 1.0mA
Forward Voltage (Note 1)
Reverse Leakage Current (Note 1)
Total Capacitance
Reverse Recovery Time
(See Figure 1)
I
F
= 10mA
I
F
= 40mA
Min
40
-
-
-
Typ
-
-
-
-
Max
-
380
500
1000
Units
V
mV
uA
pF
ns
V
R
= 25V
0Vdc Bias, f =1 MHz
I
F
= 10mA, I
R
= 10mA
R
L
= 100 Ohms;
measured at I
Rrec
= 1mA
-
-
-
-
-
-
1.0
5.0
5.0
Note 1. Short duration pulse to minimize self-heating effect
820
Ω
+10 V
2 .0 k
Ω
100 µH
0 .1 µ F
I
F
0 .1 µ F
?
DUT
5 0
Ω
O u tp u t
P u ls e
G e n e ra to r
5 0
Ω
In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (I
F
) to 10mA
2. Input pulse is adjusted to I
R(peak)
is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
June 13.2012-REV.01
Page 2
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BAS40TW/ADW/CDW/SDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
100
T
A
= 125 °C
(uA)
T
A
= 125 °C
R
10
T
A
= 75 °C
(mA)
Reverse Leakage Current, I
F
10
Forward Current, I
1
1
T
A
= 75 °C
T
A
= -25 °C
0.1
T
A
= 25 °C
0.01
T
A
= -25 °C
T
A
= 25 °C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.001
0
10
20
30
40
Forward Voltage , V
F
(V)
Reverse Voltage, V
R
(V)
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
4
3.5
3
2.5
2
1.5
1
0.5
0
0
10
20
Reverse Voltage, V
R
(V)
Total Capacitance, C
T
(pF)
30
40
Fig. 4. Typical Capacitance
June 13.2012-REV.01
Page 3
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BAS40TW/ADW/CDW/SDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
SOT-363
Unit
：
inch(mm)
SOT-363
Unit
：
inch(mm)
0.087(2.20)
0.074(1.90)
0.010(0.25)
0.018
(0.45)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.010(0.25)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.012(0.30)
0.005(0.15)
0.026
(0.65)
0.026
(0.65)
ORDERING INFORMATION
BAS40xxx T/R7 - 7" reel, 3K units per reel
BAS40xxx T/R13 - 13" reel, 10K units per reel
June 13.2012-REV.01
Page 4
www.panjit.com
0.075
(1.90)
0.030(0.75)
0.021(0.55)
0.020
(0.50)
BAS40TW/ADW/CDW/SDW
Part No_packing code_Version
BAS40TW_R1_00001
BAS40TW_R2_00001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
June 13.2012-REV.01
PAGE .
5
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