LITE-ON
SEMICONDUCTOR
3.0SMCJ SERIES
STAND-OFF VOLTAGE -
5.0
to
170
Volts
POWER DISSIPATION -
3000
WATTS
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ns for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
SMC
SMC
DIM.
A
B
C
B
C
D
E
MIN.
6.60
5.59
2.92
0.15
7.75
0.05
2.01
0.76
MAX.
7.11
6.22
3.18
0.31
8.13
0.20
2.40
1.52
A
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.007 ounces, 0.21 gram
G
H
E
F
D
F
G
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
PEAK POWER DISSIPATION AT T
J
= 25
℃
, T
P
= 1ms (Note 1)
Peak Forward Surge Current 8.3ms single
half sine-wave @T
J
=25
℃
(Note 2)
SYMBOLS
VALUE
UNIT
P
PK
3000
WATTS
I
FSM
300
AMPS.
Steady State Power Dissipation at TL =120
℃
lead lenghts 0.375" (9.5mm) , see fig. 6
P
M(AV)
2.0
WATTS
Operating Temperature Range
T
J
-55 to +175
C
Storage Temperature Range
T
STG
-55 to +175
C
REV. 11, Sep-2012, KSIC03
NOTES : 1. Non-repetitive current pulse, per Fig. 3 and derated above T
J
= 25
℃
per Fig.1.
2. Only for unidirectional units.
RATING AND CHARACTERISTIC CURVES
3.0SMCJ SERIES
FIG.1 - PULSE DERATING CURVE
PEAK PULSE DERATING IN % OFPEAK
POWER OR CURRENT
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
75
50
25
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A
PEAK FORWARD SURGE
CURRENT,
AMPERES
200
150
100
50
8.3ms Single Half-Sine-Wave
0
0
25
50
75
100
125
150
175
200
0
1
2
5
10
20
50
100
JUNCTION TEMPERATURE,
℃
NUMBER OF CYCLES AT 60Hz
FIG.3 - PULSE WAVEFORM
10000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
T
R
=10us
I
P,
PEAK PULSE CURRENT , (% )
100
Peak value (I
RSM)
Uni-directional
Half value=
CAPACITANCE , (pF)
I
RSM
2
Bi-directional
1000
Pulse width (T
P
) is defined
as that point where the
peak current decays to
50% of I
RSM
50
10 x 1000 waveform as
defined by R.E.A.
100
T
J
=25 C
TP
Measured at
Zero Bias
0
0
1.0
2.0
3.0
4.0
10
1
10
100
T
J
= 25 C
1000
T , TIME ( ms )
STAND-OFF VOLTAGE, VOLTS
FIG.5 - PULSE RATING CURVE
100
T
A
=25 C
PM
(AV)
, STEADY STATE POWER DISSIPATION (W)
FIG.6 - STEADY STATE POWER DERATING CURVE
2.0
P
P
, PEAK POWER ( K
W
)
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3
1.6
1.2
0.8
1.0
8.0mm LEAD AREAS
0.4
60Hz RESISTIVE OR
INDUCTIVE LOAD
0.1
0.1us
1.0us
10us
100us
1.0ms
10ms
0.0
0
25
50
75
100
125
150
175
T
P
, PULSE WIDTH
TL, LEAD TEMPERATURE,℃
FPGA/CPLD
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