TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
包装说明 | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 0.5 A |
集电极-发射极最大电压 | 45 V |
配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE) | 2000 |
JESD-30 代码 | R-PDSO-G4 |
元件数量 | 1 |
端子数量 | 4 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
VCEsat-Max | 1.3 V |
Base Number Matches | 1 |
BSP60-TAPE-13 | BSP61-TAPE-13 | BSP60-TAPE-7 | BSP61-TAPE-7 | BSP62-TAPE-13 | BSP62-TAPE-7 | |
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描述 | TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
集电极-发射极最大电压 | 45 V | 60 V | 45 V | 60 V | 80 V | 80 V |
配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE) | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 4 | 4 | 4 | 4 | 4 | 4 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
VCEsat-Max | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
Base Number Matches | 1 | 1 | 1 | 1 | - | - |
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