JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTA143TE/DTA143TUA/DTA143TKA
/DTA143TSA/ DTA143TCA
DIGITAL TRANSISTOR (PNP)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
DTA143TE
(1) Base
(2) Emitter
(3) Collector
SOT-523
Addreviated symbol: 93
SOT-323
Addreviated symbol: 93
DTA143TUA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
DTA143TKA
(1) Base
(2) Emitter
(3) Collector
DTA143TCA
DTA114ECA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
Addreviated symbol: 93
SOT-23-3L
Addreviated symbol: 93
SOT-23
DTA143TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base
voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
Tj
Tstg
150
Limits (DTA143T□ )
E
UA
CA
-50
-50
-5
-100
200
150
-55~150
300
KA
SA
Unit
V
V
V
mA
mW
℃
℃
Collector-emitter voltage
Emitter-base
voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
100
3.29
4.7
250
Min.
-50
-50
-5
-0.5
-0.5
-0.3
600
6.11
KΩ
MHz
V
CE
=-10V ,I
E
=5mA,f=100MHz
Typ
Max.
Unit
V
V
V
µA
µA
V
Conditions
Ic=-50µA
Ic=-1mA
I
E
=-50µA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA,I
B
=-0.25mA
V
CE
=-5V,I
C
=-1mA
Typical Characteristics