RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, DIE
参数名称 | 属性值 |
零件包装代码 | TO-72 |
包装说明 | , |
针数 | 4 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.03 A |
基于收集器的最大容量 | 0.8 pF |
集电极-发射极最大电压 | 30 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 20 |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码 | TO-72 |
元件数量 | 1 |
最高工作温度 | 200 °C |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
2N4957DIE | JANTXV2N4957 | JANTX2N4957 | JAN2N4957 | |
---|---|---|---|---|
描述 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, DIE | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN-4 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN-4 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN-4 |
零件包装代码 | TO-72 | TO-72 | TO-72 | TO-72 |
包装说明 | , | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 |
针数 | 4 | 4 | 4 | 4 |
Reach Compliance Code | unknown | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
基于收集器的最大容量 | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF |
集电极-发射极最大电压 | 30 V | 30 V | 30 V | 30 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 20 | 20 | 20 | 20 |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码 | TO-72 | TO-72 | TO-72 | TO-72 |
元件数量 | 1 | 1 | 1 | 1 |
最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C |
极性/信道类型 | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Qualified | Qualified | Qualified |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 |
是否Rohs认证 | - | 符合 | 不符合 | 不符合 |
JESD-30 代码 | - | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 |
端子数量 | - | 4 | 4 | 4 |
封装主体材料 | - | METAL | METAL | METAL |
封装形状 | - | ROUND | ROUND | ROUND |
封装形式 | - | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
最大功率耗散 (Abs) | - | 0.2 W | 0.2 W | 0.2 W |
参考标准 | - | MIL-19500/426 | MIL-19500/426 | MIL-19500/426 |
表面贴装 | - | NO | NO | NO |
端子形式 | - | WIRE | WIRE | WIRE |
端子位置 | - | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
标称过渡频率 (fT) | - | 1200 MHz | 1200 MHz | 1200 MHz |
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