Peak Pulse Power 3000W
Glass Passivated TVS
Features
●
Glass passivated chip
●
Low inductance
●
Excellent clamping capability
●
Very fast response time
●
3000 W peak pulse power capability
with a 10/1000 µs waveform
●
Compatible with soldering
Devices for Bidirectional Applications
●
For bi-directional devices, use suffix C or CA
Electrical characteristics apply in both directions.
Process Details
Chip Type
GDT3KP
PDPW
(pcs/4"wafer)
316
A (+1/-2)
180
Size（mil）
B（±2）
C（±2）
13
151
D（±1）
1.5
Surface
Metalization
Ni(0.6~1um)/
Au(0.05um)
Maximum Ratings & Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000µs waveform
(see pulse
Peakfig. 1) current with a waveform (see fig. 3 , single
Symbol
P
PPM
VALUE
3000
UNIT
W
A
I
PPM
See Next Table
pulse)
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig. 2
1/3
Peak Pulse Power 3000W
Glass Passivated TVS
Type
Breakdown Voltage at
V
(BR)
(V)
Min
Max
I
T(1)
Test Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Maximum
Maximum
Peak Pulse
Clamping
Surge
Voltage
at
(2)
I
PPM
Current
I
PPM
(A)
V
C
(V)
GDT3KP130A
GDT3KP150A
GDT3KP160A
GDT3KP170A
GDT3KP180A
GDT3KP190A
GDT3KP200A
GDT3KP210A
GDT3KP220A
144
167
178
189
196
209
220
231
242
165.5
192.5
205
217.5
230.4
243.2
256
268.8
281.6
1
1
1
1
1
1
1
1
1
130
150
160
170
180
190
200
210
220
2
2
2
2
2
2
2
2
2
14.4
12.4
11.6
11
10.3
9.7
9.3
8.8
8.4
209
243
259
275
292
308
324
340
356
Notes:
(1) V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
(2) Surge current waveform Per Fig. 3 and derate Per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) Ratings at 25°C ambient temperature unless otherwise specified.
Characteristic Curves
(T
A
=25
℃
unless otherwise noted)
GDT3KP5.0A thru GDT3KP220A
3/3
Microchip MCU
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