LITE-ON
SEMICONDUCTOR
3.0SMCJ SERIES
STAND-OFF VOLTAGE -
5.0
to
170
Volts
POWER DISSIPATION -
3000
WATTS
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ns for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
SMC
SMC
DIM.
A
B
C
B
C
D
E
F
G
H
E
F
D
G
H
MIN.
6.60
5.59
2.92
0.15
7.75
0.05
2.01
0.76
MAX.
7.11
6.22
3.18
0.31
8.13
0.20
2.40
1.52
A
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.007 ounces, 0.21 gram
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
PEAK POWER DISSIPATION AT T
J
= 25
℃
T
P
= 1ms (Note 1)
Peak Forward Surge Current 8.3ms single
half sine-wave @T
J
=25
℃
(Note 2)
,
SYMBOLS
VALUE
UNIT
P
PK
3000
WATTS
I
FSM
300
AMPS.
Steady State Power Dissipation at TL =120
℃
lead lenghts 0.375" (9.5mm) , see fig. 6
P
M(AV)
2.0
WATTS
Operating Temperature Range
T
J
-55 to +175
C
Storage Temperature Range
T
STG
-55 to +175
C
REV. 10, Aug-2011, KSIC03
NOTES : 1. Non-repetitive current pulse, per Fig. 3 and derated above T
J
= 25
℃
per Fig.1.
2. Only for unidirectional units.
RATING AND CHARACTERISTIC CURVES
3.0SMCJ SERIES
FIG.1 - PULSE DERATING CURVE
PEAK PULSE DERATING IN % OFPEAK
POWER OR CURRENT
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
300
250
200
150
100
50
8.3ms Single Half-Sine-Wave
75
50
25
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A
0
0
25
50
75
100
125
150
175
200
0
1
2
5
10
20
50
100
JUNCTION TEMPERATURE,
℃
NUMBER OF CYCLES AT 60Hz
FIG.3 - PULSE WAVEFORM
10000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
T
R
=10us
I
P,
PEAK PULSE CURRENT , (% )
100
Peak value (I
RSM)
Uni-directional
Half value=
CAPACITANCE , (pF)
I
RSM
2
Bi-directional
1000
Pulse width (T
P
) is defined
as that point where the
peak current decays to 50%
of I
RSM
50
10 x 1000 waveform as
defined by R.E.A.
100
T
J
=25 C
TP
Measured at
Zero Bias
0
0
1.0
2.0
3.0
4.0
T
J
= 25 C
10
100
1000
10
1
T , TIME ( ms )
STAND-OFF VOLTAGE, VOLTS
FIG.5 - PULSE RATING CURVE
100
T
A
=25 C
PM
(AV)
, STEADY STATE POWER DISSIPATION (W)
FIG.6 - STEADY STATE POWER DERATING CURVE
2.0
P
P
, PEAK POWER ( K
W
)
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3
1.6
1.2
0.8
1.0
8.0mm LEAD AREAS
0.4
60Hz RESISTIVE OR
INDUCTIVE LOAD
0.1
0.1us
1.0us
10us
100us
1.0ms
10ms
0.0
0
25
50
75
100
125
150
175
T
P
, PULSE WIDTH
TL, LEAD TEMPERATURE,℃
Type
Number
(UNI)
3.0SMCJ130
3.0SMCJ130A
3.0SMCJ150
3.0SMCJ150A
3.0SMCJ160
3.0SMCJ160A
3.0SMCJ170
3.0SMCJ170A
NOTES:
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Type
Number
(BI)
Device
Marking code
(UNI)
HHH
HHK
HHL
HHM
HHN
HHP
HHQ
HHR
(BI)
---
---
---
---
---
---
---
---
Reverse
Standoff
Voltage
VR (V)
130.0
130.0
150.0
150.0
160.0
160.0
170.0
170.0
Breakdown Voltage
BV Volts @It
Min (V)
144.0
144.0
167.0
167.0
178.0
178.0
189.0
189.0
Max (V)
176.0
159.2
204.1
184.6
217.5
196.7
231.0
208.9
It (mA)
1
1
1
1
1
1
1
1
Max.
Reverse
Leakage
@VR
IR (uA)
5
5
5
5
5
5
5
5
Max.
Clamping
Voltage
@Ipp
Vc (V)
231.0
209.0
268.0
243.0
287.0
259.0
304.0
275.0
Max.
Peak
Pulse
Current
Ipp (A)
13.0
14.4
11.2
12.3
10.5
11.6
9.9
10.9
1) 'Suffix 'C' denotes bidirectional device. Suffix 'A' denotes 5% tolerance device, no suffix denotes 10% tolerance device .
2) For bidirectional devices having VR of 10 volts and under, the IR limit is doubled .
3) Mark "*" denote that comply IEC 61000-4-5 Severity levels, 6KV. For data lines requiring a 42
current waveform is defind as 8/20us.
source impedance, the short-circuit
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