LITE-ON
SEMICONDUCTOR
B320B thru B360B
REVERSE VOLTAGE -
20
to
60
Volts
FORWARD CURRENT -
3.0
Amperes
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SMB
SMB
A
DIM.
A
B
B
C
C
D
E
G
F
F
E
D
G
H
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
B320B
20
14
20
B330B
30
21
30
B340B
40
28
40
3.0
100
B350B
50
35
50
B360B
60
42
60
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
L
=100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
I
FSM
V
F
I
R
C
J
R
0JL
R
0JA
A
0.5
0.5
20
250
10
50
-55 to +125
-55 to +150
0.7
V
mA
pF
C/W
C/W
@T
J
=25 C
@T
J
=100 C
T
J
T
STG
C
C
REV. 2, 01-Dec-2000, KSHB05
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Lead.
3. Thermal Resistance Junction to Ambient.
RATING AND CHARACTERISTIC CURVES
B320B thru B360B
AVERAGE FORWARD CURRENT
AMPERES
5.0
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
120
100
80
60
40
20
0
1
2
5
10
20
50
100
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
4.0
3.0
2.0
1.0
0
25
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
50
75
100
125
150
175
LEAD TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT ,(A)
1000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
B350B to B360B
1.0
CAPACITANCE , (pF)
B320B to B340B
100
0.1
T
J
= 25 C
PULSEWIDTH:300us
T
J
= 25 C F= 1MHz
.01
0
0.2
0.4
0.6
0.8
1.0
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
10
0.1
1.0
4.0
10.0
100
REVERSE VOLTAGE, (VOLTS)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS
REVERSE CURRENT, (mA)
T
J
= 125 C
10
T
J
= 100 C
1.0
0.1
0.01
T
J
= 25 C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KSHB05
物联网大赛方案集锦
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
