SMB5913B~SMB5942B
Zener diode
Features
1. For surface mounted applications
2. Low zener impedance
3. Low regulation factor
4. V
Z
-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤50℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
1.5
P
V
/V
Z
150
-65~+175
Unit
W
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=9.5mm(3/8”) T
L
=constant
Symbol
R
thJA
Value
100
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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SMB5913B~SMB5942B
Device
V
Znom1)
I
ZT
for
r
zjT
r
zjK
at
I
ZK
I
R
at
V
R
marking
V
mA
Ω
Ω
mA
μA
V
SMB5913B
5913B
3.3
113.6
<10
<500
1
<50
1
SMB5914B
5914B
3.6
104.2
<9
<500
1
<35.5
1
SMB5915B
5915B
3.9
96.1
<7.5
<500
1
<12.5
1
SMB5916B
5916B
4.3
87.2
<6
<500
1
<2.5
1
SMB5917B
5917B
4.7
79.8
<5
<500
1
<2.5
1.5
SMB5918B
5918B
5.1
73.5
<4
<350
1
<2.5
2
SMB5919B
5919B
5.6
66.9
<2
<250
1
<2.5
3
SMB5920B
5920B
6.2
60.5
<2
<200
1
<2.5
4
SMB5921B
5921B
6.8
55.1
<2.5
<200
1
<2.5
5.2
SMB5922B
5922B
7.5
50
<3
<400
0. 5
<2.5
6
SMB5923B
5923B
8.2
45.7
<3.5
<400
0. 5
<2.5
6.5
SMB5924B
5924B
9.1
41.2
<4
<500
0. 5
<2.5
7
SMB5925B
5925B
10
37.5
<4.5
<500
0.25
<2.5
8
SMB5926B
5926B
11
34,1
<5.5
<550
0.25
<0.5
8.4
SMB5927B
5927B
12
31.2
<6.5
<550
0.25
<0.5
9.1
SMB5928B
5928B
13
28.8
<7
<550
0.25
<0.5
9.9
SMB5929B
5929B
15
25
<9
<600
0.25
<0.5
11.4
SMB5930B
5930B
16
23.4
<10
<600
0.25
<0.5
12.2
SMB5931B
5931B
18
20.8
<12
<650
0.25
<0.5
13.7
SMB5932B
5932B
20
18.7
<14
<650
0.25
<0.5
15.2
SMB5933B
5933B
22
17
<17.5
<650
0.25
<0.5
16.7
SMB5934B
5934B
24
15.6
<19
<700
0.25
<0.5
18.2
SMB5935B
5935B
27
13.9
<23
<700
0.25
<0.5
20.6
SMB5936B
5936B
30
12.5
<26
<750
0.25
<0.5
22.8
SMB5937B
5937B
33
11.4
<33
<800
0.25
<0.5
25.1
SMB5938B
5938B
36
10.4
<38
<850
0.25
<0.5
27.4
SMB5939B
5939B
39
9.6
<45
<900
0.25
<0.5
29.7
SMB5940B
5940B
43
8.7
<53
<950
0.25
<0.5
32.7
SMB5941B
5941B
47
8
<67
<1000
0.25
<0.5
35.8
SMB5942B
5942B
51
7.3
<70
<1100
0.25
<0.5
38.8
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
)at 30℃,
Type
9.5mm(3/8”) from the diode body.
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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SMB5913B~SMB5942B
Characteristics
(T
j
=25℃ unless otherwise specified)
Symbol
Vz
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
Parameter
Reverse zener voltage @ I
ZT
Reverse current
Maximum zener impedance @ I
ZT
Reverse current
Maximum zener impedance @ I
ZK
Reverse leakage current @ V
R
Breakdown voltage
Forward current
Forward voltage @ I
F
Figure 1. Zener voltage regulator
Figure 2. Steady state power derating
Figure 3. Vz – 3.3 thru 10 volts
Figure 4. Zener voltage – 3.3 to 12 volts
Figure 5. Zener voltage – 14 to 43 volts
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
3/5
SMB5913B~SMB5942B
Figure 6. Effect of zener voltage
Figure 7. Capacitance curve
Figure 8. Typical pulse rating curve
Figure 9. Pulse waveform
Figure 10. Pulse waveform
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
4/5
SMB5913B~SMB5942B
Dimensions in inches (mm)
Cathode identification
59
18B
DO-214AA (SMBJ)
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
5/5
嵌入式系统
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