IRL1104LPBF,IRL1104LPBF pdf中文资料,IRL1104LPBF引脚图,IRL1104LPBF电路-Datasheet-电子工程世界

IRL1104LPBF: 产品描述MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC; 产品类别半导体分立半导体; 文件大小225KB，共11页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

下载文档详细参数选型对比全文预览

IRL1104LPBF在线购买

供应商	器件名称	价格	最低购买	库存
	IRL1104LPBF	-	-	点击查看	点击购买

MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC

参数名称	属性值
产品种类 Product Category	MOSFET
制造商 Manufacturer	Infineon(英飞凌)
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-262-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	104 A
Rds On - Drain-Source Resistance	12 mOhms
Vgs - Gate-Source Voltage	16 V
Qg - Gate Charge	45.3 nC
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement
系列 Packaging	Tube
Fall Time	64 ns
高度 Height	9.45 mm
长度 Length	10.2 mm
Pd-功率耗散 Pd - Power Dissipation	167 W
Rise Time	257 ns
工厂包装数量 Factory Pack Quantity	3200
Transistor Type	1 N-Channel
类型 Type	Preliminary
Typical Turn-Off Delay Time	32 ns
Typical Turn-On Delay Time	18 ns
宽度 Width	4.5 mm
单位重量 Unit Weight	0.084199 oz

	IRL1104LPBF	IRL1104SPBF
描述	MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC	MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
产品种类 Product Category	MOSFET	MOSFET
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)
RoHS	Details	Details
技术 Technology	Si	Si
安装风格 Mounting Style	Through Hole	SMD/SMT
封装 / 箱体 Package / Case	TO-262-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V	40 V
Id - Continuous Drain Current	104 A	104 A
Rds On - Drain-Source Resistance	12 mOhms	12 mOhms
Vgs - Gate-Source Voltage	16 V	16 V
Qg - Gate Charge	45.3 nC	45.3 nC
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C
最大工作温度 Maximum Operating Temperature	+ 175 C	+ 175 C
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
系列 Packaging	Tube	Tube
Fall Time	64 ns	64 ns
高度 Height	9.45 mm	2.3 mm
长度 Length	10.2 mm	6.5 mm
Pd-功率耗散 Pd - Power Dissipation	167 W	167 W
Rise Time	257 ns	257 ns
工厂包装数量 Factory Pack Quantity	3200	3200
Transistor Type	1 N-Channel	1 N-Channel
类型 Type	Preliminary	Preliminary
Typical Turn-Off Delay Time	32 ns	32 ns
Typical Turn-On Delay Time	18 ns	18 ns
宽度 Width	4.5 mm	6.22 mm
单位重量 Unit Weight	0.084199 oz	0.139332 oz

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W