MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Infineon(英飞凌) |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | TO-252-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 104 A |
Rds On - Drain-Source Resistance | 12 mOhms |
Vgs - Gate-Source Voltage | 16 V |
Qg - Gate Charge | 45.3 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Tube |
Fall Time | 64 ns |
高度 Height | 2.3 mm |
长度 Length | 6.5 mm |
Pd-功率耗散 Pd - Power Dissipation | 167 W |
Rise Time | 257 ns |
工厂包装数量 Factory Pack Quantity | 3200 |
Transistor Type | 1 N-Channel |
类型 Type | Preliminary |
Typical Turn-Off Delay Time | 32 ns |
Typical Turn-On Delay Time | 18 ns |
宽度 Width | 6.22 mm |
单位重量 Unit Weight | 0.139332 oz |
IRL1104SPBF | IRL1104LPBF | |
---|---|---|
描述 | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC |
产品种类 Product Category |
MOSFET | MOSFET |
制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) |
RoHS | Details | Details |
技术 Technology |
Si | Si |
安装风格 Mounting Style |
SMD/SMT | Through Hole |
封装 / 箱体 Package / Case |
TO-252-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | 40 V |
Id - Continuous Drain Current | 104 A | 104 A |
Rds On - Drain-Source Resistance | 12 mOhms | 12 mOhms |
Vgs - Gate-Source Voltage | 16 V | 16 V |
Qg - Gate Charge | 45.3 nC | 45.3 nC |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
+ 175 C | + 175 C |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
系列 Packaging |
Tube | Tube |
Fall Time | 64 ns | 64 ns |
高度 Height |
2.3 mm | 9.45 mm |
长度 Length |
6.5 mm | 10.2 mm |
Pd-功率耗散 Pd - Power Dissipation |
167 W | 167 W |
Rise Time | 257 ns | 257 ns |
工厂包装数量 Factory Pack Quantity |
3200 | 3200 |
Transistor Type | 1 N-Channel | 1 N-Channel |
类型 Type |
Preliminary | Preliminary |
Typical Turn-Off Delay Time | 32 ns | 32 ns |
Typical Turn-On Delay Time | 18 ns | 18 ns |
宽度 Width |
6.22 mm | 4.5 mm |
单位重量 Unit Weight |
0.139332 oz | 0.084199 oz |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved