RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
参数名称 | 属性值 |
产品种类 Product Category | RF MOSFET Transistors |
制造商 Manufacturer | Infineon(英飞凌) |
RoHS | Details |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 1.85 A |
Vds - Drain-Source Breakdown Voltage | 65 V |
技术 Technology | Si |
Gain | 18.5 dB |
Output Power | 55 W |
最大工作温度 Maximum Operating Temperature | + 150 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | H-37260-2 |
系列 Packaging | Tray |
Configuration | Single |
Operating Frequency | 920 MHz to 960 MHz |
Pd-功率耗散 Pd - Power Dissipation | 700 W |
工厂包装数量 Factory Pack Quantity | 40 |
类型 Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 12 V |
PTFA092201FV1 | PTFA092201F-V4-R250 | |
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描述 | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | RF MOSFET Transistors Hi Pwr RF LDMOS FET 220 W 920-960 MHZ |
产品种类 Product Category |
RF MOSFET Transistors | RF MOSFET Transistors |
制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) |
RoHS | Details | Details |
Transistor Polarity | N-Channel | N-Channel |
Id - Continuous Drain Current | 1.85 A | 1.85 A |
Vds - Drain-Source Breakdown Voltage | 65 V | 65 V |
技术 Technology |
Si | Si |
Gain | 18.5 dB | 18.5 dB |
Output Power | 55 W | 55 W |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
H-37260-2 | H-37260-2 |
Configuration | Single | Single |
Operating Frequency | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
Pd-功率耗散 Pd - Power Dissipation |
700 W | 700 W |
工厂包装数量 Factory Pack Quantity |
40 | 250 |
类型 Type |
RF Power MOSFET | RF Power MOSFET |
Vgs - Gate-Source Voltage | 12 V | 12 V |
系列 Packaging |
Tray | Reel |
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