Peak Pulse Power 5000W
Glass Passivated TVS
Features
●
Glass passivated chip
●
Low inductance
●
Excellent clamping capability
●
Very fast response time
●
5000 W peak pulse power capability
with a 10/1000 µs waveform
●
Compatible with soldering
Devices for Bidirectional Applications
●
For bi-directional devices, use suffix C or CA
Electrical characteristics apply in both directions.
Process Details
Chip Type
GDT5KP
PDPW
(pcs/4"wafer)
191
Size（mil）
A (+1/-2)
220
B（±2）
13
C（±2）
189
D（±1）
1.5
Surface
Metalization
Ni(0.6~1um)/
Au(0.05um)
Maximum Ratings & Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000µs waveform
(see fig. 1)
Peak pulse current with a waveform (see fig. 3 , single
pulse)
Symbol
P
PPM
I
PPM
VALUE
5000
See Next Table
UNIT
W
A
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig. 2
1/3
Peak Pulse Power 5000W
Glass Passivated TVS
Type
Breakdown Voltage at
V
(BR)
(V)
Min
Max
I
T(1)
Test Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Maximum
Peak Pulse
Surge
Current
(2)
I
PPM
(A)
Maximum
Clamping
Voltage
at
I
PPM
V
C
(V)
GDT5KP150A
GDT5KP160A
GDT5KP170A
GDT5KP180A
GDT5KP190A
GDT5KP200A
GDT5KP210A
GDT5KP220A
GDT5KP250A
167
178
189
200
211
222
233
244
277
185
197
209
221
233
246
258
270
306
5
5
5
5
5
5
5
5
5
150
160
170
180
190
200
210
220
250
2
2
2
2
2
2
2
2
2
21
19.7
18.5
17.5
16.5
15.5
14.6
13.7
12
243
259
275
292
310
329.2
349.5
371.1
425
Notes:
(1) V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
(2) Surge current waveform Per Fig. 3 and derate Per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) Ratings at 25°C ambient temperature unless otherwise specified.
Characteristic Curves
(T
A
=25
℃
unless otherwise noted)
GDT5KP5.0A thru GDT5KP250A
3/3
嵌入式系统
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