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",共31个Datasheet相关器件
器件名 厂商 描 述 功能
IRFP250 Renesas Electronics Corporation 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 下载
IRFP250 FCI / Amphenol Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
IRFP250 Thomson Consumer Electronics Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
IRFP250 General Electric Solid State Transistor 下载
IRFP250 Texas Instruments(德州仪器) IRFP250 下载
IRFP250 Rochester Electronics 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 下载
IRFP250 STMICROELECTRONICS MOSFET N-Ch 200 Volt 33 Amp 下载
IRFP250 Vishay MOSFET N-Chan 200V 30 Amp 下载
IRFP250 IXYS ( Littelfuse ) MOSFET 30 Amps 200V 0.085 Rds 下载
IRFP250 International Rectifier ( Infineon ) POWER, FET 下载
IRFP250 SAMSUNG POWER, FET 下载
IRFP250 Fairchild POWER, FET 下载
IRFP250A SAMSUNG Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN 下载
IRFP250A Fairchild Advanced Power MOSFET 下载
IRFP250B Rochester Electronics 32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN 下载
IRFP250B Fairchild POWER, FET 下载
IRFP250M Infineon —— 下载
IRFP250MPBF IR 漏源电压(Vdss):200V 连续漏极电流(Id)(25°C 时):30A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:75mΩ @ 18A,10V 最大功率耗散(Ta=25°C):214W 类型:N沟道 N沟道,200V,30A,75mΩ@10V 下载
IRFP250MPBF Infineon MOSFET MOSFT 200V 30A 75mOhm 82nCAC 下载
IRFP250MPBF International Rectifier ( Infineon ) HEXFET® Power MOSFET 下载
IRFP250MPBF_15 International Rectifier ( Infineon ) Advanced Process Technology 下载
IRFP250N Fairchild Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 下载
IRFP250N International Rectifier ( Infineon ) 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 下载
IRFP250NPBF Infineon 漏源电压(Vdss):200V 连续漏极电流(Id)(25°C 时):30A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:75mΩ @ 18A,10V 最大功率耗散(Ta=25°C):214W 类型:N沟道 N沟道,200V,30A,75mΩ@10V 下载
IRFP250NPBF International Rectifier ( Infineon ) 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 下载
IRFP250NPBF_15 International Rectifier ( Infineon ) Advanced Process Technology 下载
IRFP250PBF Vishay 漏源电压(Vdss):200V 连续漏极电流(Id)(25°C 时):30A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:85mΩ @ 18A,10V 最大功率耗散(Ta=25°C):190W 类型:N沟道 N沟道,200V,30A,85mΩ@10V 下载
IRFP250PBF International Rectifier ( Infineon ) HEXFET㈢ Power MOSFET 下载
IRFP250R Harris Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 下载
IRFP250R Renesas Electronics Corporation 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 下载
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