器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
UMG5 | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | 下载 |
UMG5N | ROHM(罗姆半导体) | Emitter common (dual digital transistors) | 下载 |
UMG5N | HTSEMI( Jin Yu Semiconductor ) | dual digital transistors (PNP PNP) | 下载 |
UMG5NTR | ROHM(罗姆半导体) | Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA | 下载 |
UMG5TL | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | 下载 |
型号 | UMG5TL | UMG5TR |
---|---|---|
描述 | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, |
是否Rohs认证 | 符合 | 符合 |
厂商名称 | ROHM(罗姆半导体) | ROHM(罗姆半导体) |
包装说明 | SMALL OUTLINE, R-PDSO-G5 | SMALL OUTLINE, R-PDSO-G5 |
Reach Compliance Code | compli | compliant |
ECCN代码 | EAR99 | EAR99 |
其他特性 | DIGITAL, BUILT IN BIAS RESISTOR | DIGITAL, BUILT IN BIAS RESISTOR |
最大集电极电流 (IC) | 0.07 A | 0.07 A |
集电极-发射极最大电压 | 50 V | 50 V |
配置 | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 68 | 68 |
JESD-30 代码 | R-PDSO-G5 | R-PDSO-G5 |
JESD-609代码 | e3/e2 | e2 |
元件数量 | 2 | 2 |
端子数量 | 5 | 5 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 |
极性/信道类型 | NPN | NPN |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | YES | YES |
端子面层 | TIN/TIN COPPER | Tin/Copper (Sn/Cu) |
端子形式 | GULL WING | GULL WING |
端子位置 | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 10 | 10 |
晶体管应用 | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved