型号 |
TN2106N3-GP014 |
TN2106N3-GP002 |
TN2106N3-GP002 |
TN2106N3-GP003 |
TN2106N3-GP003 |
TN2106N3-GP005 |
TN2106N3-GP005 |
TN2106N3-GP013 |
TN2106N3-GP013 |
TN2106N3-GP014 |
描述 |
Small Signal Field-Effect Transistor, |
Small Signal Field-Effect Transistor, |
SMALL SIGNAL, FET |
Small Signal Field-Effect Transistor, |
SMALL SIGNAL, FET |
Small Signal Field-Effect Transistor, |
SMALL SIGNAL, FET |
Small Signal Field-Effect Transistor, |
SMALL SIGNAL, FET |
SMALL SIGNAL, FET |
是否Rohs认证 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
厂商名称 |
Supertex |
Supertex |
Microchip(微芯科技) |
Supertex |
Microchip(微芯科技) |
Supertex |
Microchip(微芯科技) |
Supertex |
Microchip(微芯科技) |
Microchip(微芯科技) |
Reach Compliance Code |
unknown |
unknown |
compliant |
unknown |
compliant |
unknown |
compliant |
unknown |
compliant |
compliant |
配置 |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 |
100 V |
100 V |
100 V |
100 V |
100 V |
100 V |
100 V |
100 V |
100 V |
100 V |
最大漏极电流 (ID) |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
1.2 A |
最大漏源导通电阻 |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
0.35 Ω |
FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) |
65 pF |
65 pF |
65 pF |
65 pF |
65 pF |
65 pF |
65 pF |
65 pF |
65 pF |
65 pF |
JEDEC-95代码 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
TO-92 |
JESD-30 代码 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
O-PBCY-T3 |
元件数量 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
端子数量 |
3 |
3 |
3 |
3 |
3 |
3 |
3 |
3 |
3 |
3 |
工作模式 |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
最高工作温度 |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
最低工作温度 |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
封装形状 |
ROUND |
ROUND |
ROUND |
ROUND |
ROUND |
ROUND |
ROUND |
ROUND |
ROUND |
ROUND |
封装形式 |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
CYLINDRICAL |
极性/信道类型 |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
最大功率耗散 (Abs) |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
0.74 W |
表面贴装 |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
端子形式 |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
端子位置 |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
晶体管应用 |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
晶体管元件材料 |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |