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T9014-14C

eeworld网站中关于T9014-14C有23个元器件。有T901N、T901N等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
T901N Cobham PLC RF/Microwave Termination, 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION 下载
T901N EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2000A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element, 下载
T901N Infineon(英飞凌) Full blocking 50/60Hz over a wide range temperature range 下载
T901N28TOF EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, 下载
T901N28TOF Infineon(英飞凌) Silicon Controlled Rectifier, 900000mA I(T), 2800V V(DRM) 下载
T901N28TOH Infineon(英飞凌) Silicon Controlled Rectifier, 950000mA I(T), 2800V V(DRM) 下载
T901N28TOH EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, 下载
T901N32TOF EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, 下载
T901N32TOFXPSA1 Infineon(英飞凌) SCR MODULE 3600V 29900A DO200AE 下载
T901N32TOH Infineon(英飞凌) Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, 下载
T901N33TOH Infineon(英飞凌) Silicon Controlled Rectifier, 1300000mA I(T), 3300V V(DRM) 下载
T901N34TOF EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, 下载
T901N34TOF Infineon(英飞凌) Silicon Controlled Rectifier, 900000mA I(T), 3400V V(DRM) 下载
T901N34TOH Infineon(英飞凌) Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, 下载
T901N35TOF EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3500V V(DRM), 3500V V(RRM), 1 Element, 下载
T901N35TOF Infineon(英飞凌) Silicon Controlled Rectifier, 900000mA I(T), 3500V V(DRM) 下载
T901N35TOFXPSA1 Infineon(英飞凌) SCR MODULE 3600V 1480A DO200AC 下载
T901N35TOH Infineon(英飞凌) Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3500V V(DRM), 3500V V(RRM), 1 Element, 下载
T901N36TOF EUPEC [eupec GmbH] Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, 下载
T901N36TOF Infineon(英飞凌) The T901N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 76mm and a height of 26mm. 下载
T901N36TOFXPSA1 Infineon(英飞凌) SCR MODULE 3600V 29900A DO200AE 下载
T901N36TOH Infineon(英飞凌) Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, 下载
T901N37TOH Infineon(英飞凌) Silicon Controlled Rectifier, 1300000mA I(T), 3700V V(DRM) 下载
关于T9014-14C相关文档资料:
对应元器件 pdf文档资料下载
T901N32TOFXPSA1 、 T901N32TOH 、 T901N34TOH 、 T901N35TOF 、 T901N35TOFXPSA1 、 T901N36TOF 、 T901N36TOFXPSA1 、 T901N36TOH 下载文档
T901N28TOF 、 T901N33TOH 、 T901N34TOF 、 T901N34TOF 、 T901N37TOH 下载文档
T901N28TOF 、 T901N32TOF 、 T901N34TOF 、 T901N36TOF 下载文档
T901N28TOH 、 T901N35TOH 下载文档
T901N35TOF 下载文档
T901N 下载文档
T901N28TOH 下载文档
T901N 下载文档
T9014-14C资料比对:
型号 T901N32TOFXPSA1 T901N32TOH T901N34TOH T901N35TOF T901N35TOFXPSA1 T901N36TOF T901N36TOFXPSA1 T901N36TOH
描述 SCR MODULE 3600V 29900A DO200AE Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, Silicon Controlled Rectifier, 900000mA I(T), 3500V V(DRM) SCR MODULE 3600V 1480A DO200AC The T901N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 76mm and a height of 26mm. SCR MODULE 3600V 29900A DO200AE Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element,
Reach Compliance Code compliant compliant compli compliant compliant compliant compliant compliant
JESD-30 代码 O-CXDB-X4 O-XXDB-X3 O-XXDB-X3 O-CXDB-X4 O-CXDB-X4 O-CXDB-X4 O-CXDB-X4 O-XXDB-X3
端子数量 4 3 3 4 4 4 4 3
封装主体材料 CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
表面贴装 YES YES YES YES YES YES YES YES
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
触发设备类型 SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1 1
是否Rohs认证 符合 - - 符合 符合 符合 符合 -
ECCN代码 EAR99 - - EAR99 EAR99 EAR99 EAR99 -
配置 SINGLE SINGLE SINGLE - SINGLE - SINGLE SINGLE
最大直流栅极触发电流 350 mA 350 mA 350 mA 300 mA 350 mA - 350 mA 350 mA
元件数量 1 1 1 - 1 - 1 1
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C - 125 °C 125 °C
峰值回流温度(摄氏度) NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
最大均方根通态电流 2050 A 1480 A 1480 A - 2050 A - 2050 A 1480 A
断态重复峰值电压 3200 V 3200 V 3400 V 3500 V 3500 V - 3600 V 3600 V
重复峰值反向电压 3200 V 3200 V 3400 V - 3500 V - 3600 V 3600 V
处于峰值回流温度下的最长时间 NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
包装说明 - DISK BUTTON, O-XXDB-X3 DISK BUTTON, O-XXDB-X3 - DISK BUTTON, O-CXDB-X4 - DISK BUTTON, O-CXDB-X4 DISK BUTTON, O-XXDB-X3
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