器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
T901N | Cobham PLC | RF/Microwave Termination, 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION | 下载 |
T901N | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2000A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element, | 下载 |
T901N | Infineon(英飞凌) | Full blocking 50/60Hz over a wide range temperature range | 下载 |
T901N28TOF | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, | 下载 |
T901N28TOF | Infineon(英飞凌) | Silicon Controlled Rectifier, 900000mA I(T), 2800V V(DRM) | 下载 |
T901N28TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 950000mA I(T), 2800V V(DRM) | 下载 |
T901N28TOH | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, | 下载 |
T901N32TOF | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, | 下载 |
T901N32TOFXPSA1 | Infineon(英飞凌) | SCR MODULE 3600V 29900A DO200AE | 下载 |
T901N32TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, | 下载 |
T901N33TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 1300000mA I(T), 3300V V(DRM) | 下载 |
T901N34TOF | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, | 下载 |
T901N34TOF | Infineon(英飞凌) | Silicon Controlled Rectifier, 900000mA I(T), 3400V V(DRM) | 下载 |
T901N34TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, | 下载 |
T901N35TOF | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3500V V(DRM), 3500V V(RRM), 1 Element, | 下载 |
T901N35TOF | Infineon(英飞凌) | Silicon Controlled Rectifier, 900000mA I(T), 3500V V(DRM) | 下载 |
T901N35TOFXPSA1 | Infineon(英飞凌) | SCR MODULE 3600V 1480A DO200AC | 下载 |
T901N35TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3500V V(DRM), 3500V V(RRM), 1 Element, | 下载 |
T901N36TOF | EUPEC [eupec GmbH] | Silicon Controlled Rectifier, 2050A I(T)RMS, 900000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, | 下载 |
T901N36TOF | Infineon(英飞凌) | The T901N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 76mm and a height of 26mm. | 下载 |
T901N36TOFXPSA1 | Infineon(英飞凌) | SCR MODULE 3600V 29900A DO200AE | 下载 |
T901N36TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, | 下载 |
T901N37TOH | Infineon(英飞凌) | Silicon Controlled Rectifier, 1300000mA I(T), 3700V V(DRM) | 下载 |
对应元器件 | pdf文档资料下载 |
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T901N32TOFXPSA1 、 T901N32TOH 、 T901N34TOH 、 T901N35TOF 、 T901N35TOFXPSA1 、 T901N36TOF 、 T901N36TOFXPSA1 、 T901N36TOH | 下载文档 |
T901N28TOF 、 T901N33TOH 、 T901N34TOF 、 T901N34TOF 、 T901N37TOH | 下载文档 |
T901N28TOF 、 T901N32TOF 、 T901N34TOF 、 T901N36TOF | 下载文档 |
T901N28TOH 、 T901N35TOH | 下载文档 |
T901N35TOF | 下载文档 |
T901N | 下载文档 |
T901N28TOH | 下载文档 |
T901N | 下载文档 |
型号 | T901N32TOFXPSA1 | T901N32TOH | T901N34TOH | T901N35TOF | T901N35TOFXPSA1 | T901N36TOF | T901N36TOFXPSA1 | T901N36TOH |
---|---|---|---|---|---|---|---|---|
描述 | SCR MODULE 3600V 29900A DO200AE | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, | Silicon Controlled Rectifier, 900000mA I(T), 3500V V(DRM) | SCR MODULE 3600V 1480A DO200AC | The T901N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 76mm and a height of 26mm. | SCR MODULE 3600V 29900A DO200AE | Silicon Controlled Rectifier, 2050A I(T)RMS, 950000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, |
Reach Compliance Code | compliant | compliant | compli | compliant | compliant | compliant | compliant | compliant |
JESD-30 代码 | O-CXDB-X4 | O-XXDB-X3 | O-XXDB-X3 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-XXDB-X3 |
端子数量 | 4 | 3 | 3 | 4 | 4 | 4 | 4 | 3 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
端子位置 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
触发设备类型 | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
是否Rohs认证 | 符合 | - | - | 符合 | 符合 | 符合 | 符合 | - |
ECCN代码 | EAR99 | - | - | EAR99 | EAR99 | EAR99 | EAR99 | - |
配置 | SINGLE | SINGLE | SINGLE | - | SINGLE | - | SINGLE | SINGLE |
最大直流栅极触发电流 | 350 mA | 350 mA | 350 mA | 300 mA | 350 mA | - | 350 mA | 350 mA |
元件数量 | 1 | 1 | 1 | - | 1 | - | 1 | 1 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | - | 125 °C | 125 °C |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
最大均方根通态电流 | 2050 A | 1480 A | 1480 A | - | 2050 A | - | 2050 A | 1480 A |
断态重复峰值电压 | 3200 V | 3200 V | 3400 V | 3500 V | 3500 V | - | 3600 V | 3600 V |
重复峰值反向电压 | 3200 V | 3200 V | 3400 V | - | 3500 V | - | 3600 V | 3600 V |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
包装说明 | - | DISK BUTTON, O-XXDB-X3 | DISK BUTTON, O-XXDB-X3 | - | DISK BUTTON, O-CXDB-X4 | - | DISK BUTTON, O-CXDB-X4 | DISK BUTTON, O-XXDB-X3 |
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