器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IS61LV256AL | ISSI(芯成半导体) | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 下载 |
IS61LV256AL_09 | ISSI(芯成半导体) | 32K x 8 LOW VOLTAGE CMOS STATIC RAM | 下载 |
IS61LV256AL-10J | ISSI(芯成半导体) | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 下载 |
IS61LV256AL-10J | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | 下载 |
IS61LV256AL-10JI | ISSI(芯成半导体) | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 下载 |
IS61LV256AL-10JI | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | 下载 |
IS61LV256AL-10JL | ISSI(芯成半导体) | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 下载 |
IS61LV256AL-10JL | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28 | 下载 |
IS61LV256AL-10JLI | All Sensors | sram 256k 32kx8 10ns async sram 3.3v | 下载 |
IS61LV256AL-10JLI | ISSI(芯成半导体) | SRAM 256K 32Kx8 10ns Async SRAM 3.3v | 下载 |
IS61LV256AL-10JLI | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28 | 下载 |
IS61LV256AL-10JLI-TR | All Sensors | sram 256k 32kx8 10ns async sram 3.3v | 下载 |
IS61LV256AL-10JLI-TR | ISSI(芯成半导体) | SRAM 256K 32Kx8 10ns Async SRAM 3.3v | 下载 |
IS61LV256AL-10T | ISSI(芯成半导体) | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 下载 |
IS61LV256AL-10T | Integrated Silicon Solution ( ISSI ) | 32KX8 STANDARD SRAM, 10ns, PDSO28, 8 X 13.40 MM, MO-183, TSOP1-28 | 下载 |
IS61LV256AL-10TI | ISSI(芯成半导体) | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 下载 |
IS61LV256AL-10TI | Integrated Silicon Solution ( ISSI ) | 32KX8 STANDARD SRAM, 10ns, PDSO28, 8 X 13.40 MM, MO-183, TSOP1-28 | 下载 |
IS61LV256AL-10TL | ISSI(芯成半导体) | 存储器接口类型:Parallel 存储器容量:256Kb (32K x 8) 工作电压:3.3V 存储器类型:Volatile 256-Kbit(32K x 8bit),并行接口,工作电压:3.3V | 下载 |
IS61LV256AL-10TL | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-28 | 下载 |
IS61LV256AL-10TLI | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-28 | 下载 |
IS61LV256AL-10TLI | ISSI(芯成半导体) | —— | 下载 |
IS61LV256AL-10TLI-TR | All Sensors | sram 256k 32kx8 10ns async sram 3.3v | 下载 |
IS61LV256AL-10TLI-TR | ISSI(芯成半导体) | SRAM 256K 32Kx8 10ns Async SRAM 3.3v | 下载 |
IS61LV256AL-10TLI-TR | Integrated Silicon Solution ( ISSI ) | Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-28 | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IS61LV256AL-10JI 、 IS61LV256AL-10JL 、 IS61LV256AL-10T 、 IS61LV256AL-10TI 、 IS61LV256AL 、 IS61LV256AL-10J | 下载文档 |
IS61LV256AL-10JI 、 IS61LV256AL-10JL 、 IS61LV256AL-10TI | 下载文档 |
IS61LV256AL-10JLI-TR 、 IS61LV256AL-10TLI-TR | 下载文档 |
IS61LV256AL-10TL 、 IS61LV256AL-10TLI | 下载文档 |
IS61LV256AL-10TLI 、 IS61LV256AL-10TLI-TR | 下载文档 |
IS61LV256AL-10JLI-TR 、 IS61LV256AL-10TLI-TR | 下载文档 |
IS61LV256AL-10J | 下载文档 |
IS61LV256AL_09 | 下载文档 |
IS61LV256AL-10JLI | 下载文档 |
IS61LV256AL-10TL | 下载文档 |
型号 | IS61LV256AL | IS61LV256AL-10J | IS61LV256AL-10JI | IS61LV256AL-10JL | IS61LV256AL-10T | IS61LV256AL-10TI |
---|---|---|---|---|---|---|
描述 | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 |
最大工作温度 | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel |
最小工作温度 | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel | -40 Cel |
最大供电/工作电压 | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V |
最小供电/工作电压 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
额定供电电压 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
最大存取时间 | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns |
加工封装描述 | 8 × 13.40 MM, 铅 FREE, MO-183, TSOP1-28 | 8 × 13.40 MM, 铅 FREE, MO-183, TSOP1-28 | 8 × 13.40 MM, 铅 FREE, MO-183, TSOP1-28 | 8 × 13.40 MM, 铅 FREE, MO-183, TSOP1-28 | 8 × 13.40 MM, 铅 FREE, MO-183, TSOP1-28 | 8 × 13.40 MM, 铅 FREE, MO-183, TSOP1-28 |
无铅 | Yes | Yes | Yes | Yes | Yes | Yes |
欧盟RoHS规范 | Yes | Yes | Yes | Yes | Yes | Yes |
状态 | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
工艺 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
包装形状 | 矩形的 | 矩形的 | 矩形的 | 矩形的 | 矩形的 | 矩形的 |
包装尺寸 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
表面贴装 | Yes | Yes | Yes | Yes | Yes | Yes |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子间距 | 0.5500 mm | 0.5500 mm | 0.5500 mm | 0.5500 mm | 0.5500 mm | 0.5500 mm |
端子涂层 | MATTE 锡 | MATTE 锡 | MATTE 锡 | MATTE 锡 | MATTE 锡 | MATTE 锡 |
端子位置 | 双 | 双 | 双 | 双 | 双 | 双 |
包装材料 | 塑料/环氧树脂 | 塑料/环氧树脂 | 塑料/环氧树脂 | 塑料/环氧树脂 | 塑料/环氧树脂 | 塑料/环氧树脂 |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
组织 | 32K × 8 | 32K × 8 | 32K × 8 | 32K × 8 | 32K × 8 | 32K × 8 |
存储密度 | 262144 deg | 262144 deg | 262144 deg | 262144 deg | 262144 deg | 262144 deg |
操作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
内存IC类型 | 标准存储器 | 标准存储器 | 标准存储器 | 标准存储器 | 标准存储器 | 标准存储器 |
串行并行 | 并行 | 并行 | 并行 | 并行 | 并行 | 并行 |
位数 | 32K | 32K | 32K | 32K | 32K | 32K |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved