器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRLR2905Z | International Rectifier ( Infineon ) | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 下载 |
IRLR2905Z | Kersemi Electronic | Advanced Process Technology | 下载 |
IRLR2905Z | Infineon(英飞凌) | MOSFET N-CH 55V 42A DPAK | 下载 |
IRLR2905Z | ISC | N-Channel MOSFET Transistor | 下载 |
IRLR2905ZPBF | International Rectifier ( Infineon ) | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 下载 |
IRLR2905ZPBF | Infineon(英飞凌) | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 下载 |
IRLR2905ZPBF_15 | International Rectifier ( Infineon ) | Advanced Process Technology | 下载 |
IRLR2905ZTR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | 下载 |
IRLR2905ZTRL | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | 下载 |
IRLR2905ZTRLPBF | International Rectifier ( Infineon ) | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 下载 |
IRLR2905ZTRLPBF | Infineon(英飞凌) | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | 下载 |
IRLR2905ZTRPBF | International Rectifier ( Infineon ) | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 下载 |
IRLR2905ZTRPBF | Infineon(英飞凌) | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 下载 |
IRLR2905ZTRPBF | IR | 漏源电压(Vdss):55V 连续漏极电流(Id)(25°C 时):42A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:13.5mΩ @ 36A,10V 最大功率耗散(Ta=25°C):110W 类型:N沟道 N沟道,55V,42A,13.5mΩ@10V | 下载 |
IRLR2905ZTRPBF | 台湾微碧(VBsemi) | N-Channel 60 V (D-S) MOSFET | 下载 |
IRLR2905ZTRR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | 下载 |
IRLR2905ZTRRPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | 下载 |
对应元器件 | pdf文档资料下载 |
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IRLR2905ZTR 、 IRLR2905ZTRL 、 IRLR2905ZTRR 、 IRLR2905ZTRRPBF | 下载文档 |
IRLR2905ZPBF 、 IRLR2905ZTRLPBF 、 IRLR2905ZTRPBF | 下载文档 |
IRLR2905ZTRLPBF | 下载文档 |
IRLR2905ZTRPBF | 下载文档 |
IRLR2905ZTRPBF | 下载文档 |
IRLR2905ZPBF | 下载文档 |
IRLR2905Z | 下载文档 |
IRLR2905Z | 下载文档 |
IRLR2905Z | 下载文档 |
IRLR2905ZPBF_15 | 下载文档 |
型号 | IRLR2905ZTRRPBF | IRLR2905ZTR | IRLR2905ZTRL | IRLR2905ZTRR |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 |
是否Rohs认证 | 符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
零件包装代码 | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
包装说明 | LEAD FREE, PLASTIC, DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas) | 85 mJ | 85 mJ | 85 mJ | 85 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V |
最大漏极电流 (Abs) (ID) | 60 A | 60 A | 60 A | 60 A |
最大漏极电流 (ID) | 42 A | 42 A | 42 A | 42 A |
最大漏源导通电阻 | 0.0135 Ω | 0.0135 Ω | 0.0135 Ω | 0.0135 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609代码 | e3 | e0 | e0 | e0 |
湿度敏感等级 | 1 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | 245 | 260 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 110 W | 110 W | 110 W | 110 W |
最大脉冲漏极电流 (IDM) | 240 A | 240 A | 240 A | 240 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子面层 | MATTE TIN OVER NICKEL | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | 30 | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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