器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRHM9160 | International Rectifier ( Infineon ) | 35 A, 100 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
IRHM9160 | Infineon(英飞凌) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | 下载 |
IRHM9160_15 | International Rectifier ( Infineon ) | Simple Drive Requirements | 下载 |
IRHM9160D | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
IRHM9160DPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
IRHM9160PBF | Infineon(英飞凌) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | 下载 |
IRHM9160PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | 下载 |
IRHM9160SCS | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
IRHM9160SCSPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
IRHM9160U | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
IRHM9160UPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IRHM9160 、 IRHM9160D 、 IRHM9160DPBF 、 IRHM9160PBF 、 IRHM9160SCSPBF 、 IRHM9160U 、 IRHM9160UPBF | 下载文档 |
IRHM9160SCS | 下载文档 |
IRHM9160PBF | 下载文档 |
IRHM9160_15 | 下载文档 |
IRHM9160 | 下载文档 |
型号 | IRHM9160UPBF | IRHM9160 | IRHM9160D | IRHM9160DPBF | IRHM9160PBF | IRHM9160SCSPBF | IRHM9160U |
---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 35 A, 100 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 35A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
是否无铅 | 不含铅 | 含铅 | 含铅 | 不含铅 | 不含铅 | 不含铅 | 含铅 |
是否Rohs认证 | 符合 | 不符合 | 不符合 | 符合 | 符合 | 符合 | 不符合 |
包装说明 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-XSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-XSFM-P3 | FLANGE MOUNT, S-XSFM-P3 | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code | compliant | compli | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Is Samacsys | N | N | N | N | N | N | N |
其他特性 | HIGH RELIABILITY, RADIATION HARDENED | HIGH RELIABILITY | HIGH RELIABILITY, RADIATION HARDENED | HIGH RELIABILITY, RADIATION HARDENED | HIGH RELIABILITY | HIGH RELIABILITY, AVALANCHE RATED | HIGH RELIABILITY, RADIATION HARDENED |
雪崩能效等级(Eas) | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
最大漏极电流 (ID) | 35 A | 35 A | 35 A | 35 A | 35 A | 35 A | 35 A |
最大漏源导通电阻 | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA |
JESD-30 代码 | S-MSFM-P3 | S-XSFM-P3 | S-MSFM-P3 | S-MSFM-P3 | S-XSFM-P3 | S-XSFM-P3 | S-MSFM-P3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | METAL | UNSPECIFIED | METAL | METAL | UNSPECIFIED | UNSPECIFIED | METAL |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | 260 | 260 | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 152 A | 140 A | 152 A | 152 A | 140 A | 152 A | 152 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 40 | NOT SPECIFIED | NOT SPECIFIED | 40 | 40 | 40 | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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