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IRFR430

eeworld网站中关于IRFR430有39个元器件。有IRFR430、IRFR430A等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IRFR430 Fairchild Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 下载
IRFR430A International Rectifier ( Infineon ) SMPS MOSFET 下载
IRFR430A Kersemi Electronic Power MOSFET 下载
IRFR430A Fairchild Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 下载
IRFR430A Vishay(威世) MOSFET N-Chan 500V 5.0 Amp 下载
IRFR430A SAMSUNG(三星) Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 下载
IRFR430A ISC isc N-Channel MOSFET Transistor 下载
IRFR430APBF International Rectifier ( Infineon ) 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFR430APBF Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFR430APBF Vishay(威世) MOSFET N-Chan 500V 5.0 Amp 下载
IRFR430ATR International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 下载
IRFR430ATR Vishay(威世) MOSFET N-Chan 500V 5.0 Amp 下载
IRFR430ATRA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFR430ATRL Kersemi Electronic Power MOSFET 下载
IRFR430ATRL Vishay(威世) 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFR430ATRL International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 下载
IRFR430ATRLA Kersemi Electronic Power MOSFET 下载
IRFR430ATRLPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 下载
IRFR430ATRLPBF Vishay(威世) MOSFET N-Chan 500V 5.0 Amp 下载
IRFR430ATRLPBFA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 下载
IRFR430ATRLPBFA Vishay(威世) Power MOSFET 下载
IRFR430ATRPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 下载
IRFR430ATRPBF Vishay(威世) MOSFET N-Chan 500V 5.0 Amp 下载
IRFR430ATRPBF IR 漏源电压(Vdss):500V 连续漏极电流(Id)(25°C 时):5A 栅源极阈值电压:4.5V @ 250uA 漏源导通电阻:1.7Ω @ 3A,10V 最大功率耗散(Ta=25°C):110W 类型:N沟道 N沟道,500V,5A,1.7Ω@10V 下载
IRFR430ATRPBFA Kersemi Electronic Power MOSFET 下载
IRFR430ATRPBFA Vishay(威世) Power MOSFET 下载
IRFR430ATRR Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 下载
IRFR430ATRR International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 下载
IRFR430ATRR Vishay(威世) MOSFET N-Chan 500V 5.0 Amp 下载
IRFR430ATRRA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
关于IRFR430相关文档资料:
对应元器件 pdf文档资料下载
IRFR430APBF 、 IRFR430ATRA 、 IRFR430ATRRA 、 IRFR430ATRRPBFA 下载文档
IRFR430ATRLPBF 、 IRFR430ATRPBF 、 IRFR430ATRRPBF 下载文档
IRFR430ATR 、 IRFR430ATRLPBF 下载文档
IRFR430ATRL 、 IRFR430ATRLA 下载文档
IRFR430A 、 IRFR430ATRPBF 下载文档
IRFR430ATRLPBFA 、 IRFR430ATRR 下载文档
IRFR430BTF 、 IRFR430BTM 下载文档
IRFR430ATRPBF 下载文档
IRFR430BTF 下载文档
IRFR430BTM 下载文档
IRFR430资料比对:
型号 IRFR430ATRRA IRFR430APBF IRFR430ATRA IRFR430ATRRPBFA
描述 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
端子数量 2 2 2 2
最小击穿电压 500 V 500 V 500 V 500 V
加工封装描述 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3
无铅 Yes Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes Yes
状态 ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes Yes Yes
端子形式 GULL WING GULL WING GULL WING GULL WING
端子涂层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子位置 SINGLE SINGLE SINGLE SINGLE
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
壳体连接 DRAIN DRAIN DRAIN DRAIN
元件数量 1 1 1 1
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
通道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
场效应晶体管技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
操作模式 ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
晶体管类型 GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
最大漏电流 5 A 5 A 5 A 5 A
额定雪崩能量 130 mJ 130 mJ 130 mJ 130 mJ
最大漏极导通电阻 1.7 ohm 1.7 ohm 1.7 ohm 1.7 ohm
最大漏电流脉冲 20 A 20 A 20 A 20 A
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