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IRFR/U

eeworld网站中关于IRFR/U有40个元器件。有IRFRU024N、IRFR/U1010Z等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IRFRU024N International Rectifier ( Infineon ) 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFR/U1010Z Kersemi Electronic Advanced Process Technology 下载
IRFRU110A Fairchild Advanced Power MOSFET 下载
IRFRU1205 International Rectifier ( Infineon ) Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) 下载
IRFR/U1205PBF Kersemi Electronic Ultra Low On-Resistance 下载
IRFRU120A Fairchild Advanced Power MOSFET 下载
IRFRU130A Fairchild Advanced Power MOSFET 下载
IRFR/U130A Fairchild advanced power mosfet 下载
IRFRU20PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 下载
IRFR/U220A Fairchild Advanced Power MOSFET 下载
IRFRU220A Fairchild Advanced Power MOSFET 下载
IRFR/U2307ZPBF Kersemi Electronic Advanced Process Technology 下载
IRFR/U2405 Kersemi Electronic 30 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFR/U2407 Kersemi Electronic HEXFET Power MOSFET 下载
IRFR/U2607ZPBF Kersemi Electronic AUTOMOTIVE MOSFET 下载
IRFR/U2905Z Kersemi Electronic Advanced Process Technology 下载
IRFR/U3303 Kersemi Electronic HEXFET Power MOSFET 下载
IRFR/U3303PBF Kersemi Electronic HEXFET Power MOSFET 下载
IRFR/U3504 Kersemi Electronic AUTOMOTIVE MOSFET 下载
IRFR/U3504PBF Kersemi Electronic AUTOMOTIVE MOSFET 下载
IRFR/U3504ZPBF Kersemi Electronic Advanced Process Technology 下载
IRFR/U3505 Kersemi Electronic AUTOMOTIVE MOSFET 下载
IRFR/U3505PBF Kersemi Electronic AUTOMOTIVE MOSFET 下载
IRFRU3707PBF International Rectifier ( Infineon ) HEXFET㈢ Power MOSFET 下载
IRFRU3707PBF Kersemi Electronic SMPS MOSFET 下载
IRFR/U3709Z Kersemi Electronic High Frequency Synchronous Buck Converters for Computer Processor Power 下载
IRFRU3910 International Rectifier ( Infineon ) Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) 下载
IRFRU4105 International Rectifier ( Infineon ) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) 下载
IRFRU5305 International Rectifier ( Infineon ) 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 下载
IRFRU5410 International Rectifier ( Infineon ) Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) 下载
关于IRFR/U相关文档资料:
对应元器件 pdf文档资料下载
IRFR010TR 、 IRFR010TRL 、 IRFR010TRLPBF 、 IRFR010TRR 、 IRFR012TR 、 IRFR020TR 、 IRFR020TRL 、 IRFR020TRPBF 、 IRFR020TRR 、 IRFR020TRRPBF 下载文档
IRFR014PBF 、 IRFR014TR 、 IRFR014TRL 、 IRFR014TRLPBF 、 IRFR014TRPBF 、 IRFR014 下载文档
IRFR014PBF 、 IRFR014TRL 、 IRFR014TRPBF 、 IRFR014TRRPBF 下载文档
IRFR010-T1 、 IRFR012-T1 、 IRFR014-T1 、 IRFR015-T1 下载文档
IRFR020 、 IRFR020PBF 、 IRFR020TR 、 IRFR020TRPBF 下载文档
IRFR012 、 IRFR014 、 IRFR020 、 IRFR022 下载文档
IRFR012 、 IRFR015 、 IRFR022 下载文档
IRFR014TRLPBF 、 IRFR014TRPBF 、 IRFR014TRRPBF 下载文档
IRFR014TR 、 IRFR014TRL 、 IRFR014TRR 下载文档
IRFR010 、 IRFR014 下载文档
IRFR/U资料比对:
型号 IRFR010TR IRFR010TRL IRFR010TRLPBF IRFR010TRR IRFR012TR IRFR020TR IRFR020TRL IRFR020TRPBF IRFR020TRR IRFR020TRRPBF
描述 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Reach Compliance Code compliant compliant not_compliant unknown compliant compliant unknown not_compliant compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
最大漏极电流 (ID) 8.2 A 8.2 A 8.2 A 8.2 A 6.7 A 15 A 15 A 15 A 15 A 15 A
最大漏源导通电阻 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.3 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 33 A 33 A 33 A 33 A 27 A 60 A 60 A 60 A 60 A 60 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
是否Rohs认证 不符合 不符合 符合 - 不符合 不符合 不符合 符合 不符合 符合
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) - - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 -
JESD-609代码 e0 e0 e3 - e0 e0 e0 e3 e0 e3
湿度敏感等级 1 1 1 - 1 1 - 1 1 1
峰值回流温度(摄氏度) 260 260 260 - 260 260 - 260 260 260
端子面层 TIN LEAD TIN LEAD MATTE TIN OVER NICKEL - TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL TIN LEAD MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED 30 - NOT SPECIFIED NOT SPECIFIED - 30 NOT SPECIFIED 30
Base Number Matches - 1 1 - 1 1 1 1 1 1
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