器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRFI520G | International Rectifier ( Infineon ) | HEXFET POWER MOSFET | 下载 |
IRFI520G | Vishay(威世) | MOSFET N-Chan 100V 7.2 Amp | 下载 |
IRFI520G-002 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-002PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-003 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-003PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-004 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-004PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-005 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-005PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-006 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-006PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-009 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-009PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-010 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-010PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-011 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-011PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-012 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-012PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-013 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-013PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-015 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-015PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-017 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-017PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-018 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-018PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-019 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRFI520G-019PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
HEXFET POWER MOSFET
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | International Rectifier ( Infineon ) |
零件包装代码 | TO-220AB |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 36 mJ |
外壳连接 | ISOLATED |
配置 | SINGLE |
最小漏源击穿电压 | 100 V |
最大漏极电流 (Abs) (ID) | 7.2 A |
最大漏极电流 (ID) | 7.2 A |
最大漏源导通电阻 | 0.27 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
功耗环境最大值 | 37 W |
最大功率耗散 (Abs) | 37 W |
最大脉冲漏极电流 (IDM) | 29 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
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