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IRFI520G

在41个相关元器件中,IRFI520G有相关的pdf资料。
器件名 厂商 描 述 功能
IRFI520G International Rectifier ( Infineon ) HEXFET POWER MOSFET 下载
IRFI520G Vishay(威世) MOSFET N-Chan 100V 7.2 Amp 下载
IRFI520G-002 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-002PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-003 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-003PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-004 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-004PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-005 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-005PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-006 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-006PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-009 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-009PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-010 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-010PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-011 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-011PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-012 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-012PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-013 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-013PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-015 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-015PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-017 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-017PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-018 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-018PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-019 International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G-019PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 下载
IRFI520G的相关参数为:

器件描述

HEXFET POWER MOSFET

参数
参数名称属性值
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
雪崩能效等级(Eas)36 mJ
外壳连接ISOLATED
配置SINGLE
最小漏源击穿电压100 V
最大漏极电流 (Abs) (ID)7.2 A
最大漏极电流 (ID)7.2 A
最大漏源导通电阻0.27 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度175 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
功耗环境最大值37 W
最大功率耗散 (Abs)37 W
最大脉冲漏极电流 (IDM)29 A
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
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