器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRFF310 | International Rectifier ( Infineon ) | 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 下载 |
IRFF310 | Intersil ( Renesas ) | 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 下载 |
IRFF310 | SEME-LAB | 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 下载 |
IRFF310 | New Jersey Semiconductor | 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 下载 |
IRFF310 | Vishay(威世) | Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | 下载 |
IRFF310 | Rochester Electronics | 1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 下载 |
IRFF310 | Renesas(瑞萨电子) | 1.35A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 下载 |
IRFF310 | Fairchild | Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 下载 |
IRFF310 | Harris | Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 下载 |
IRFF310 | TT Electronics plc | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310 | SEMELAB | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310 | Motorola ( NXP ) | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
IRFF310 | FREESCALE (NXP) | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.25A I(D),TO-205AF | 下载 |
IRFF310-JQR-B | SEMELAB | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310-JQR-B | TT Electronics plc | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310-JQR-BR1 | SEMELAB | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310-JQR-BR1 | TT Electronics plc | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310PBF | Infineon(英飞凌) | 1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 下载 |
IRFF310PBF | International Rectifier ( Infineon ) | 1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 下载 |
IRFF310R | Harris | Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 下载 |
IRFF310R | Renesas(瑞萨电子) | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF | 下载 |
IRFF310R | Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
IRFF310R | Intersil ( Renesas ) | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF | 下载 |
IRFF310R1 | SEMELAB | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310R1 | TT Electronics plc | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 下载 |
IRFF310SCC5205/014 | Infineon(英飞凌) | Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 下载 |
IRFF310SCC5205/014 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 下载 |
IRFF310SCC5205/014PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 下载 |
对应元器件 | pdf文档资料下载 |
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IRFF310 、 IRFF310-JQR-B 、 IRFF310-JQR-B 、 IRFF310-JQR-BR1 、 IRFF310-JQR-BR1 、 IRFF310R1 、 IRFF310R1 | 下载文档 |
IRFF310SCC5205/014 、 IRFF310SCC5205/014 、 IRFF310SCC5205/014PBF | 下载文档 |
IRFF310R 、 IRFF310R | 下载文档 |
IRFF310 、 IRFF310 | 下载文档 |
IRFF310 | 下载文档 |
IRFF310PBF | 下载文档 |
IRFF310R | 下载文档 |
IRFF310R | 下载文档 |
IRFF310 | 下载文档 |
IRFF310PBF | 下载文档 |
型号 | IRFF310 | IRFF310-JQR-B | IRFF310-JQR-B | IRFF310-JQR-BR1 | IRFF310-JQR-BR1 | IRFF310R1 | IRFF310R1 |
---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | TT Electronics plc | TT Electronics plc | SEMELAB | TT Electronics plc | SEMELAB | TT Electronics plc | SEMELAB |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V |
最大漏极电流 (ID) | 1.25 A | 1.25 A | 1.25 A | 1.25 A | 1.25 A | 1.25 A | 1.25 A |
最大漏源导通电阻 | 3.6 Ω | 3.6 Ω | 3.6 Ω | 3.6 Ω | 3.6 Ω | 3.6 Ω | 3.6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 |
JESD-609代码 | - | - | - | e1 | e1 | e1 | e1 |
端子面层 | - | - | - | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
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