器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRFE210 | International Rectifier ( Infineon ) | 2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET | 下载 |
IRFE210 | Infineon(英飞凌) | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | 下载 |
IRFE210 | TT Electronics plc | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | 下载 |
IRFE210 | SEMELAB | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | 下载 |
IRFE210_15 | International Rectifier ( Infineon ) | Simple Drive Requirements | 下载 |
IRFE210E4 | TT Electronics plc | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | 下载 |
IRFE210E4 | SEMELAB | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | 下载 |
IRFE210-JQR-B | SEMELAB | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | 下载 |
IRFE210-JQR-B | TT Electronics plc | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | 下载 |
IRFE210-JQR-BE4 | SEMELAB | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | 下载 |
IRFE210-JQR-BE4 | TT Electronics plc | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | 下载 |
IRFE210PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | 下载 |
IRFE210PBF | Infineon(英飞凌) | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IRFE210 、 IRFE210 、 IRFE210-JQR-B 、 IRFE210-JQR-B 、 IRFE210-JQR-BE4 、 IRFE210-JQR-BE4 、 IRFE210E4 、 IRFE210E4 | 下载文档 |
IRFE210 、 IRFE210 、 IRFE210PBF | 下载文档 |
IRFE210PBF | 下载文档 |
IRFE210_15 | 下载文档 |
型号 | IRFE210 | IRFE210 | IRFE210-JQR-B | IRFE210-JQR-B | IRFE210-JQR-BE4 | IRFE210-JQR-BE4 | IRFE210E4 | IRFE210E4 |
---|---|---|---|---|---|---|---|---|
描述 | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 |
是否Rohs认证 | 符合 | 符合 | 不符合 | 不符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | CHIP CARRIER, R-CQCC-N15 | LCC4-15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 1.8 A | 1.8 A | 1.8 A | 1.8 A | 1.8 A | 1.8 A | 1.8 A | 1.8 A |
最大漏源导通电阻 | 1.725 Ω | 1.725 Ω | 1.725 Ω | 1.725 Ω | 1.725 Ω | 1.725 Ω | 1.725 Ω | 1.725 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 |
端子数量 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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