器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRF6623TR1 | International Rectifier ( Infineon ) | Application Specific MOSFETs | 下载 |
IRF6623TR1 | Infineon(英飞凌) | MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC | 下载 |
IRF6623TR1PBF | International Rectifier ( Infineon ) | 16 A, 20 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET | 下载 |
IRF6623TR1PBF | Infineon(英飞凌) | —— | 下载 |
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | MOSFET |
RoHS | N |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | DirectFET-ST |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 16 A |
Rds On - Drain-Source Resistance | 5.7 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 11 nC |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single Quad Drain Dual Source |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | Reel |
高度 Height | 0.7 mm |
长度 Length | 4.85 mm |
Transistor Type | 1 N-Channel |
类型 Type | HEXFET Power MOSFET |
宽度 Width | 3.95 mm |
Fall Time | 4.5 ns |
Moisture Sensitive | Yes |
Pd-功率耗散 Pd - Power Dissipation | 42 W |
Rise Time | 40 ns |
工厂包装数量 Factory Pack Quantity | 1000 |
Typical Turn-Off Delay Time | 12 ns |
Typical Turn-On Delay Time | 9.7 ns |
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